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ELECTRONIC COMPONENTS

FET, MOSFET Arrays

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FF33MR12W1M1HB11BPSA1 Infineon Technologies

FF33MR12W1M1HB11BPSA1

MOSFET

Infineon Technologies

1,360 -
Datasheet - - Tray Active - - - - - - - - - - - - - - -
DF14MR12W1M1HFB67BPSA1 Infineon Technologies

DF14MR12W1M1HFB67BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

3,021 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FF11MR12W2M1HPB11BPSA1 Infineon Technologies

FF11MR12W2M1HPB11BPSA1

MOSFET 1200V

Infineon Technologies

2,965 -
Datasheet CoolSiC™ - Tray Active - - - 1200V (1.2kV) - - - - - - - - - - -
FF17MR12W1M1HPB11BPSA1 Infineon Technologies

FF17MR12W1M1HPB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

3,452 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
DF8MR12W1M1HFB67BPSA1 Infineon Technologies

DF8MR12W1M1HFB67BPSA1

MOSFET 2N-CH 1200V 45A AG-EASY1B

Infineon Technologies

1,751 -
Datasheet EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 45A 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
FF17MR12W1M1HB70BPSA1 Infineon Technologies

FF17MR12W1M1HB70BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

2,807 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FF17MR12W1M1HB17BPSA1 Infineon Technologies

FF17MR12W1M1HB17BPSA1

MOSFET 2N-CH 1200V 50A AG-EASY1B

Infineon Technologies

3,197 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 50A (Tj) 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
FF8MR12W1M1HB70BPSA1 Infineon Technologies

FF8MR12W1M1HB70BPSA1

MOSFET

Infineon Technologies

3,799 -
Datasheet - - Tray Active - - - - - - - - - - - - - - -
FF7MR12W1M1HB17BPSA1 Infineon Technologies

FF7MR12W1M1HB17BPSA1

MOSFET 2N-CH 1200V AG-EASY1B

Infineon Technologies

4,630 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tj) 5.8mOhm @ 120A, 18V 5.15V @ 56mA 400nC @ 18V 12100pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
FF6MR12W2M1HPB11BPSA1 Infineon Technologies

FF6MR12W2M1HPB11BPSA1

MOSFET 2N-CH 1200V 200A MODULE

Infineon Technologies

1,639 -
Datasheet HEXFET® Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 200A (Tj) 5.63mOhm @ 200A, 15V 5.55V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
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