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ELECTRONIC COMPONENTS
FET, MOSFET Arrays
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXH007F120M3F2PTHGMOSFET 4N-CH 1200V 149A 34PIM |
1,960 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 149A (Tc) | 10mOhm @ 120A, 18V | 4.4V @ 60mA | 407nC @ 18V | 9090pF @ 800V | 353W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 34-PIM (56.7x42.5) |
|
|
MSCSM170HRM451AGMOSFET 4N-CH 1700V/1200V 64A |
4,164 | - |
|
Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1700V (1.7kV), 1200V (1.2kV) | 64A (Tc), 89A (Tc) | 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V | 3.2V @ 2.5mA, 2.8V @ 3mA | 178nC @ 20V, 232nC @ 20V | 3300pF @ 1000V, 3020pF @ 1000V | 319W (Tc), 395W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
NXH008T120M3F2PTHGMOSFET 4N-CH 1200V 129A 29PIM |
3,907 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | - | 1200V (1.2kV) | 129A (Tc) | 11.5mOhm @ 100A, 18V | 4.4V @ 60mA | 454nC @ 20V | 9129pF @ 800V | 371W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 29-PIM (56.7x42.5) |
|
|
MSCSM120HRM311AGMOSFET 4N-CH 1200V/700V 89A |
4,575 | - |
|
Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1200V (1.2kV), 700V | 89A (Tc), 124A (Tc) | 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V | 2.8V @ 3mA, 2.4V @ 4mA | 232nC @ 20V, 215nC @ 20V | 3020pF @ 1000V, 4500pF @ 700V | 395W (Tc), 365W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
FF6MR12W2M1HPB11BPSA1MOSFET 2N-CH 1200V 200A MODULE |
1,639 | - |
|
Datasheet | HEXFET® | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 200A (Tj) | 5.63mOhm @ 200A, 15V | 5.55V @ 80mA | 496nC @ 15V | 14700pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
|
FF6MR12W2M1HB11BPSA1MOSFET 2N-CH 1200V 145A MODULE |
3,474 | - |
|
Datasheet | CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 145A (Tj) | 5.4mOhm @ 150A, 18V | 5.15V @ 60mA | 446nC @ 18V | 13200pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
|
|
GCMX005A120B3B1PMOSFET 4N-CH 1200V 383A |
1,194 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 383A (Tc) | 7mOhm @ 200A, 20V | 4V @ 80mA | 927nC @ 20V | 23500pF @ 800V | 1.154kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
NXH004P120M3F2PNGMOSFET 2N-CH 1200V 338A 36PIM |
3,546 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 338A (Tc) | 5.5mOhm @ 200A, 18V | 4.4V @ 120mA | 876nC @ 20V | 16410pF @ 800V | 1.098W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 36-PIM (56.7x62.8) |
|
|
GCMX005A120S7B1MOSFET 2N-CH 1200V 348A |
1,334 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 348A (Tc) | 7mOhm @ 200A, 20V | 4V @ 80mA | 978nC @ 20V | 29300pF @ 800V | 1.042kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
FS13MR12W2M1HPB11BPSA1MOSFET |
3,456 | - |
|
Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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CHB011M12GM4SIC, MODULE, 11M, 1200V, 48 MM, |
1,856 | - |
|
Datasheet | * | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
CBB011M12GM4SIC, MODULE, 11M, 1200V, 48 MM, |
2,367 | - |
|
Datasheet | * | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
CBB011M12GM4TSIC, MODULE, 11M, 1200V, 48 MM, |
3,210 | - |
|
Datasheet | * | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
CHB011M12GM4TSIC, MODULE, 11M, 1200V, 48 MM, |
1,884 | - |
|
Datasheet | * | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
CAB011A12GM3TMOSFET 2N-CH 1200V 141A MODULE |
1,345 | - |
|
Datasheet | - | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 141A (Tj) | 13.9mOhm @ 150A, 15V | 3.9V @ 34mA | 354nC @ 15V | 11000pF @ 1000V | 10mW | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
|
FF4MR12W2M1HPB11BPSA1MOSFET 2N-CH 1200V AG-EASY2B |
1,218 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 170A | 4mOhm @ 200A, 18V | 5.15V @ 80mA | 594nC @ 18V | 17600pF @ 800V | 20mW | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY2B |
|
|
F411MR12W2M1HPB76BPSA1MOSFET |
2,279 | - |
|
Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
FF6MR12KM1HPHPSA1MOSFET |
1,384 | - |
|
Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
CAB004M12GM4SIC, MODULE, 4M, 1200V, 48 MM, G |
1,913 | - |
|
Datasheet | * | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
CAB004M12GM4TSIC, MODULE, 4M, 1200V, 48 MM, G |
2,999 | - |
|
Datasheet | * | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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