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ELECTRONIC COMPONENTS
FET, MOSFET Arrays
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GCMX010A120B2B1PMOSFET 2N-CH 1200V 214A |
4,999 | - |
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Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 214A (Tc) | 12mOhm @ 100A, 20V | 4V @ 40mA | 476nC @ 20V | 13100pF @ 800V | 750W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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GCMX080A120B2H1PMOSFET 4N-CH 1200V 27A |
2,668 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 27A (Tc) | 100mOhm @ 20A, 20V | 4V @ 10mA | 56nC @ 20V | 1362pF @ 800V | 119W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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GCMX040A120B2H1PMOSFET 4N-CH 1200V 56A |
4,429 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 56A (Tc) | 52mOhm @ 40A, 20V | 4V @ 10mA | 121nC @ 20V | 3200pF @ 800V | 217W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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GCMX020A120B2B1PMOSFET 2N-CH 1200V 102A |
3,483 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 102A (Tc) | 28mOhm @ 50A, 20V | 4V @ 20mA | 241nC @ 20V | 6500pF @ 800V | 385W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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GCMX040A120B3H1PMOSFET 4N-CH 1200V 53A |
2,442 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 53A (Tc) | 52mOhm @ 40A, 20V | 4V @ 10mA | 125nC @ 20V | 3200pF @ 800V | 208W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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GCMX020A120B2H1PMOSFET 4N-CH 1200V 102A |
2,415 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 102A (Tc) | 28mOhm @ 50A, 20V | 4V @ 20mA | 222nC @ 20V | 5600pF @ 800V | 333W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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GCMX010A120B3B1PMOSFET 2N-CH 1200V 173A |
4,807 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 173A (Tc) | 14mOhm @ 100A, 20V | 4V @ 40mA | 483nC @ 20V | 13800pF @ 800V | 577W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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GCMX020A120B3H1PMOSFET 4N-CH 1200V 93A |
4,734 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 93A (Tc) | 28mOhm @ 50A, 20V | 4V @ 20mA | 250nC @ 20V | 6700pF @ 800V | 300W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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GCMX005A120B3B1PMOSFET 4N-CH 1200V 383A |
1,194 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 383A (Tc) | 7mOhm @ 200A, 20V | 4V @ 80mA | 927nC @ 20V | 23500pF @ 800V | 1.154kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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GCMX005A120S7B1MOSFET 2N-CH 1200V 348A |
1,334 | - |
|
Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 348A (Tc) | 7mOhm @ 200A, 20V | 4V @ 80mA | 978nC @ 20V | 29300pF @ 800V | 1.042kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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