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ELECTRONIC COMPONENTS

FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G2K6P25T Goford Semiconductor

G2K6P25T

MOSFET P-CH 250V 28A 300W TO-220

Goford Semiconductor

4,223 -
Datasheet - TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 250 V 28A (Tc) 10V 260mOhm @ 10A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 2984 pF @ 125 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT085N10TH Goford Semiconductor

GT085N10TH

MOSFET N-CH 100V 70A 100W 8.5M(

Goford Semiconductor

2,383 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 10V 8.5mOhm @ 20A, 10V 4V @ 250µA 40 nC @ 10 V ±20V 2940 pF @ 50 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT045N10T Goford Semiconductor

GT045N10T

N100V, 150A,RD<4.8M@10V,VTH2V~4V

Goford Semiconductor

2,078 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 10V 4.8mOhm @ 20A, 10V 4V @ 250µA 73 nC @ 10 V ±20V 4198 pF @ 50 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT048N10T Goford Semiconductor

GT048N10T

MOSFET N-CH 100V 110A 150W 4.8M

Goford Semiconductor

4,027 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V 2.5V @ 250µA 49 nC @ 10 V ±20V 3220 pF @ 50 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G080P06T Goford Semiconductor

G080P06T

P-60V,-195A,RD(MAX)<7.5M@-10V,VT

Goford Semiconductor

2,024 -
Datasheet TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 7.5mOhm @ 20A, 10V 4V @ 250µA 186 nC @ 10 V ±20V 14692 pF @ 30 V - 294W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT035N06T Goford Semiconductor

GT035N06T

N-CH, 60V,170A, RD(MAX)<3.5M@10V

Goford Semiconductor

3,588 -
Datasheet SGT TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 170A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.5V @ 250µA 70 nC @ 10 V ±20V 5064 pF @ 30 V - 215W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G18N50T Goford Semiconductor

G18N50T

MOSFET N-CH 500V 18A TO-220

Goford Semiconductor

3,809 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 350mOhm @ 9A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 3000 pF @ 250 V - 189.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G040P04T Goford Semiconductor

G040P04T

MOSFET P-CH 40V 222A TO-220

Goford Semiconductor

2,014 -
Datasheet - TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 40 V 222A (Tc) 4.5V, 10V 3.7mOhm @ 20A, 10V 2.5V @ 250µA 206 nC @ 10 V ±20V 15087 pF @ 20 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GC280N65F Goford Semiconductor

GC280N65F

MOSFET N-CH 650V 15A TO-220F

Goford Semiconductor

2,899 -
Datasheet - - Tube Active - MOSFET (Metal Oxide) - 15A (Tc) 10V 280mOhm @ 7.5A, 10V 4.5V @ 250µA 27 nC @ 10 V ±20V 1200 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Through Hole TO-220F
G030N06T Goford Semiconductor

G030N06T

MOSFET N-CH 60V 223A TO-220

Goford Semiconductor

100 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 223A (Tc) 4.5V, 10V 2.7mOhm @ 30A, 10V 2.5V @ 250µA 101 nC @ 10 V ±20V 11999 pF @ 30 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
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