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ELECTRONIC COMPONENTS

FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
64-4095PBF Infineon Technologies

64-4095PBF

MOSFET N-CH SMD D2PAK

Infineon Technologies

9,941 -
Datasheet - - Tube Obsolete - - - - - - - - - - - - - - - - -
AUIRF2804L-313 Infineon Technologies

AUIRF2804L-313

MOSFET N-CH 40V 195A TO262

Infineon Technologies

4,448 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2.3mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-262
AUIRFSL4010-306 Infineon Technologies

AUIRFSL4010-306

MOSFET N-CH 100V 180A TO262

Infineon Technologies

6,419 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-262
AUIRFSL4010-313 Infineon Technologies

AUIRFSL4010-313

MOSFET N-CH 100V 180A TO262

Infineon Technologies

8,751 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-262
AUXNS0306RTRL Infineon Technologies

AUXNS0306RTRL

MOSFET N-CH DPAK

Infineon Technologies

2,478 -
Datasheet - - Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) - - - - - - - - - - - - - - -
AUXNSF2804STRL7P Infineon Technologies

AUXNSF2804STRL7P

MOSFET N-CH

Infineon Technologies

9,055 -
Datasheet - - Bulk Obsolete - - - - - - - - - - - - - - - - -
IGT40R070D1ATMA1 Infineon Technologies

IGT40R070D1ATMA1

GAN HV

Infineon Technologies

2,653 -
Datasheet CoolGaN™ 8-PowerSFN Bulk Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 400 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 382 pF @ 320 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-3
IGOT60R070D1E8220AUMA1 Infineon Technologies

IGOT60R070D1E8220AUMA1

GAN HV

Infineon Technologies

9,087 -
Datasheet CoolGaN™ 20-PowerSOIC (0.433", 11.00mm Width) Bulk Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-20-87
IGT60R070D1E8220ATMA1 Infineon Technologies

IGT60R070D1E8220ATMA1

GAN HV

Infineon Technologies

3,479 -
Datasheet CoolGaN™ 8-PowerSFN Bulk Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-3
IGO60R070D1E8220AUMA1 Infineon Technologies

IGO60R070D1E8220AUMA1

GAN HV

Infineon Technologies

4,134 -
Datasheet CoolGaN™ 20-PowerSOIC (0.433", 11.00mm Width) Bulk Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-20-85
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