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ELECTRONIC COMPONENTS
FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IV1Q12160T4SIC MOSFET, 1200V 160MOHM, TO-24 |
1,088 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 195mOhm @ 10A, 20V | 2.9V @ 1.9mA | 43 nC @ 20 V | +20V, -5V | 885 pF @ 800 V | - | 138W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
IV1Q12050T3SIC MOSFET, 1200V 50MOHM, TO-247 |
6,664 | - |
|
Datasheet | - | TO-247-3 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 65mOhm @ 20A, 20V | 3.2V @ 6mA | 120 nC @ 20 V | +20V, -5V | 2770 pF @ 800 V | - | 327W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 | |
|
IV1Q12050T4SIC MOSFET, 1200V 50MOHM, TO-247 |
3,082 | - |
|
Datasheet | - | TO-247-4 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 65mOhm @ 20A, 20V | 3.2V @ 6mA | 120 nC @ 20 V | +20V, -5V | 2750 pF @ 800 V | - | 344W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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