FETs, MOSFETs

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
APT37M100B2 MOSFET N-CH 1000V 37A T-MAX Microchip Technology	4,776	-	RFQ	Datasheet	-	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	37A (Tc)	10V	330mOhm @ 18A, 10V	5V @ 2.5mA	305 nC @ 10 V	±30V	9835 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
APT44F80B2 MOSFET N-CH 800V 47A T-MAX Microchip Technology	9,462	-	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	47A (Tc)	10V	210mOhm @ 24A, 10V	5V @ 2.5mA	305 nC @ 10 V	±30V	9330 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
APT20M22LVFRG MOSFET N-CH 200V 100A TO264 Microchip Technology	7,581	-	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	100A (Tc)	10V	22mOhm @ 500mA, 10V	4V @ 2.5mA	435 nC @ 10 V	±30V	10200 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
APT6015LVFRG MOSFET N-CH 600V 38A TO264 Microchip Technology	7,741	-	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38A (Tc)	-	150mOhm @ 500mA, 10V	4V @ 2.5mA	475 nC @ 10 V	-	9000 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
APT1201R4BFLLG MOSFET N-CH 1200V 9A TO247 Microchip Technology	4,027	-	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	9A (Tc)	10V	1.5Ohm @ 4.5A, 10V	5V @ 1mA	75 nC @ 10 V	±30V	2030 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
APT8030LVRG MOSFET N-CH 800V 27A TO264 Microchip Technology	6,255	-	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	27A (Tc)	-	300mOhm @ 500mA, 10V	4V @ 2.5mA	510 nC @ 10 V	-	7900 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
APT34F100B2 MOSFET N-CH 1000V 35A T-MAX Microchip Technology	8,652	-	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	35A (Tc)	10V	380mOhm @ 18A, 10V	5V @ 2.5mA	305 nC @ 10 V	±30V	9835 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
APT34F100L MOSFET N-CH 1000V 35A TO264 Microchip Technology	6,495	-	RFQ	Datasheet	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	35A (Tc)	10V	400mOhm @ 18A, 10V	5V @ 2.5mA	305 nC @ 10 V	±30V	9835 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
APT50M75B2FLLG MOSFET N-CH 500V 57A T-MAX Microchip Technology	7,531	-	RFQ	Datasheet	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	57A (Tc)	-	75mOhm @ 28.5A, 10V	5V @ 2.5mA	125 nC @ 10 V	-	5590 pF @ 25 V	-	-	-	-	-	Through Hole	T-MAX™ [B2]
APT84F50B2 MOSFET N-CH 500V 84A T-MAX Microchip Technology	9,517	-	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	84A (Tc)	10V	65mOhm @ 42A, 10V	5V @ 2.5mA	340 nC @ 10 V	±30V	13500 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]

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