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ELECTRONIC COMPONENTS

FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
2N7008-G Microchip Technology

2N7008-G

MOSFET N-CH 60V 230MA TO92-3

Microchip Technology

533 -
Datasheet - TO-226-3, TO-92-3 (TO-226AA) Bag Active N-Channel MOSFET (Metal Oxide) 60 V 230mA (Tj) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±30V 50 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
TN2106N3-G Microchip Technology

TN2106N3-G

MOSFET N-CH 60V 300MA TO92-3

Microchip Technology

428 -
Datasheet - TO-226-3, TO-92-3 (TO-226AA) Bag Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Tj) 4.5V, 10V 2.5Ohm @ 500mA, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 740mW (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
APT30M85BVRG Microchip Technology

APT30M85BVRG

MOSFET N-CH 300V 40A TO247

Microchip Technology

1,885 -
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 40A (Tc) 10V 85mOhm @ 500mA, 10V 4V @ 1mA 195 nC @ 10 V ±30V 4950 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
APT1001RBVRG Microchip Technology

APT1001RBVRG

MOSFET N-CH 1000V 11A TO247

Microchip Technology

3,959 -
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 11A (Tc) - 1Ohm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 3660 pF @ 25 V - - - - - Through Hole TO-247 [B]
APT6025BVRG Microchip Technology

APT6025BVRG

MOSFET N-CH 600V 25A TO247

Microchip Technology

2,822 -
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) - 250mOhm @ 500mA, 10V 4V @ 1mA 275 nC @ 10 V - 5160 pF @ 25 V - - - - - Through Hole TO-247 [B]
APT37M100L Microchip Technology

APT37M100L

MOSFET N-CH 1000V 37A TO264

Microchip Technology

3,455 -
Datasheet - TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 37A (Tc) 10V 330mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9835 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264
MSC080SMA120J Microchip Technology

MSC080SMA120J

SICFET N-CH 1.2KV 35A SOT227

Microchip Technology

3,889 -
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A (Tc) - - - - - - - - -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
APT5010JVRU2 Microchip Technology

APT5010JVRU2

MOSFET N-CH 500V 44A SOT227

Microchip Technology

1,532 -
Datasheet - SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 100mOhm @ 22A, 10V 4V @ 2.5mA 312 nC @ 10 V ±30V 7410 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
MSC015SMA070B4 Microchip Technology

MSC015SMA070B4

TRANS SJT N-CH 700V 140A TO247-4

Microchip Technology

2,151 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 140A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA 215 nC @ 20 V +23V, -10V 4500 pF @ 700 V - 455W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
APT8030JVFR Microchip Technology

APT8030JVFR

MOSFET N-CH 800V 25A ISOTOP

Microchip Technology

2,893 -
Datasheet POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 800 V 25A (Tc) - 300mOhm @ 500mA, 10V 4V @ 2.5mA 510 nC @ 10 V - 7900 pF @ 25 V - - - - - Chassis Mount ISOTOP®
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