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ELECTRONIC COMPONENTS

FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TSM60NB900CH Taiwan Semiconductor Corporation

TSM60NB900CH

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

9,171 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 900mOhm @ 1.2A, 10V 4V @ 250µA 9.6 nC @ 10 V ±30V 315 pF @ 100 V - 36.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
TSM60NB900CP Taiwan Semiconductor Corporation

TSM60NB900CP

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

4,003 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 900mOhm @ 1.2A, 10V 4V @ 250µA 9.6 nC @ 10 V ±30V 315 pF @ 100 V - 36.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM088NA03CR RLG Taiwan Semiconductor Corporation

TSM088NA03CR RLG

MOSFET N-CH 30V 61A 8PDFN

Taiwan Semiconductor Corporation

4,259 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 8.8mOhm @ 13A, 10V 2.5V @ 250µA 12.6 nC @ 10 V ±20V 750 pF @ 15 V - 56W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
TSM70NB1R4CP Taiwan Semiconductor Corporation

TSM70NB1R4CP

700V, 3A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,653 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 3A (Tc) 10V 1.4Ohm @ 1.2A, 10V 4V @ 250µA 7.4 nC @ 10 V ±30V 317 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM500N15CS Taiwan Semiconductor Corporation

TSM500N15CS

150V, 11A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

6,353 -
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta), 11A (Tc) 10V 50mOhm @ 4A, 10V 4V @ 250µA 20.5 nC @ 10 V ±20V 1123 pF @ 80 V - 12.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
TSM8N80CZ C0G Taiwan Semiconductor Corporation

TSM8N80CZ C0G

MOSFET N-CHANNEL 800V 8A TO220

Taiwan Semiconductor Corporation

3,171 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.05Ohm @ 4A, 10V 4V @ 250µA 41 nC @ 10 V ±30V 1921 pF @ 25 V - 40.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TSM2N60ECP ROG Taiwan Semiconductor Corporation

TSM2N60ECP ROG

MOSFET N-CHANNEL 600V 2A TO252

Taiwan Semiconductor Corporation

7,696 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4Ohm @ 1A, 10V 5V @ 250µA 9.5 nC @ 10 V ±30V 362 pF @ 25 V - 52.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM60N600CH C5G Taiwan Semiconductor Corporation

TSM60N600CH C5G

MOSFET N-CHANNEL 600V 8A TO251

Taiwan Semiconductor Corporation

8,534 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 600mOhm @ 4A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 743 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
TSM2N100CH C5G Taiwan Semiconductor Corporation

TSM2N100CH C5G

MOSFET N-CH 1000V 1.85A TO251

Taiwan Semiconductor Corporation

3,322 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 1.85A (Tc) 10V 8.5Ohm @ 900mA, 10V 5.5V @ 250µA 17 nC @ 10 V ±30V 625 pF @ 25 V - 77W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
TSM80N1R2CH C5G Taiwan Semiconductor Corporation

TSM80N1R2CH C5G

MOSFET N-CH 800V 5.5A TO251

Taiwan Semiconductor Corporation

7,440 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 2.75A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
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