FETs, MOSFETs

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRF730STRLPBF MOSFET N-CH 400V 5.5A D2PAK Vishay Siliconix	6,565	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	400 V	5.5A (Tc)	10V	1Ohm @ 3.3A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	700 pF @ 25 V	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SIHG28N65EF-GE3 MOSFET N-CH 650V 28A TO247AC Vishay Siliconix	7,306	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	28A (Tc)	10V	117mOhm @ 14A, 10V	4V @ 250µA	146 nC @ 10 V	±30V	3249 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFI740G MOSFET N-CH 400V 5.4A TO220-3 Vishay Siliconix	9,212	-	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	5.4A (Tc)	10V	550mOhm @ 3.2A, 10V	4V @ 250µA	66 nC @ 10 V	±20V	1370 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IRFP460P MOSFET N-CH 500V 20A TO247-3 Vishay Siliconix	2,979	-	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	20A (Tc)	-	270mOhm @ 12A, 10V	4V @ 250µA	210 nC @ 10 V	-	4200 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFPC50LCPBF MOSFET N-CH 600V 11A TO247-3 Vishay Siliconix	9,261	-	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	600mOhm @ 6.6A, 10V	4V @ 250µA	84 nC @ 10 V	±30V	2300 pF @ 25 V	-	190W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFS11N50A MOSFET N-CH 500V 11A D2PAK Vishay Siliconix	3,597	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	520mOhm @ 6.6A, 10V	4V @ 250µA	52 nC @ 10 V	±30V	1423 pF @ 25 V	-	170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRFS11N50ATRL MOSFET N-CH 500V 11A D2PAK Vishay Siliconix	8,027	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	520mOhm @ 6.6A, 10V	4V @ 250µA	52 nC @ 10 V	±30V	1423 pF @ 25 V	-	170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRL640S MOSFET N-CH 200V 17A D2PAK Vishay Siliconix	7,833	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	17A (Tc)	4V, 5V	180mOhm @ 10A, 5V	2V @ 250µA	66 nC @ 5 V	±10V	1800 pF @ 25 V	-	3.1W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF840LCS MOSFET N-CH 500V 8A D2PAK Vishay Siliconix	3,582	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	8A (Tc)	10V	850mOhm @ 4.8A, 10V	4V @ 250µA	39 nC @ 10 V	±30V	1100 pF @ 25 V	-	3.1W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF840LCL MOSFET N-CH 500V 8A I2PAK Vishay Siliconix	8,411	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	8A (Tc)	10V	850mOhm @ 4.8A, 10V	4V @ 250µA	39 nC @ 10 V	±30V	1100 pF @ 25 V	-	3.1W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK

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