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ELECTRONIC COMPONENTS

FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
HUF75333S3 Harris Corporation

HUF75333S3

MOSFET N-CH 55V 66A D2PAK

Harris Corporation

1,257 -
Datasheet UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) - 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFD9113 Harris Corporation

IRFD9113

-0.6A, -80V, 1.6 OHM, P-CHANNEL

Harris Corporation

1,090 -
Datasheet - 4-DIP (0.300", 7.62mm) Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 600mA (Ta) - 1.6Ohm @ 300mA, 10V - 15 nC @ 15 V - 250 pF @ 25 V - - - - - Through Hole 4-DIP, Hexdip, HVMDIP
IRF9533 Harris Corporation

IRF9533

P-CHANNEL POWER MOSFET

Harris Corporation

11,834 -
Datasheet - TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 80 V 10A (Tc) 10V 400mOhm @ 6.5A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFD213 Harris Corporation

IRFD213

MOSFET N-CH 250V 450MA 4DIP

Harris Corporation

5,563 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 450mA (Ta) - 2Ohm @ 270mA, 10V 4V @ 250µA 8.2 nC @ 10 V - 140 pF @ 25 V - - -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
RF1S23N06LESM Harris Corporation

RF1S23N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation

5,549 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 23A - - - - - - - - - - - Surface Mount TO-263AB
HUF75329P3 Harris Corporation

HUF75329P3

MOSFET N-CH 55V 49A TO220-3

Harris Corporation

3,077 -
Datasheet UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 24mOhm @ 49A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
RF1S17N06LSM Harris Corporation

RF1S17N06LSM

LOGIC LEVEL GATE (5V) DEVICE

Harris Corporation

4,000 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 17A - - - - - - - - - - - Surface Mount TO-263AB
RF1S25N06SM Harris Corporation

RF1S25N06SM

N-CHANNEL POWER MOSFET

Harris Corporation

3,005 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 25A - - - - - - - - - - - Surface Mount TO-263AB
RFD16N03LSM9A Harris Corporation

RFD16N03LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation

1,540 -
Datasheet - - Bulk Active - - - - - - - - - - - - - - - - -
IRF9510 Harris Corporation

IRF9510

MOSFET P-CH 100V 4A TO220AB

Harris Corporation

1,187 -
Datasheet - TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
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