Professional testing equipment and reports to ensure product quality.
ELECTRONIC COMPONENTS

FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FK4B01120LE Nuvoton Technology Corporation

FK4B01120LE

SINGLE NCH MOSFET, 12V, 3.9A 17M

Nuvoton Technology Corporation

1,000 -
Datasheet - 4-XFLGA, CSP Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12 V 3.9A (Ta) 1.5V, 4.5V 24mOhm @ 1.5A, 4.5V 1V @ 394µA 7 nC @ 4.5 V ±8V 490 pF @ 10 V - 370mW (Ta) -40°C ~ 85°C (TA) Automotive AEC-Q101 Surface Mount 4-CSP (1x1)
TK8A65W,S5X Toshiba Semiconductor and Storage

TK8A65W,S5X

MOSFET N-CH 650V 7.8A TO220SIS

Toshiba Semiconductor and Storage

1,315 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 650mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK560A60Y,S4X Toshiba Semiconductor and Storage

TK560A60Y,S4X

MOSFET N-CH 600V 7A TO220SIS

Toshiba Semiconductor and Storage

4,415 -
Datasheet DTMOSV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 560mOhm @ 3.5A, 10V 4V @ 240µA 14.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W 150°C (TJ) - - Through Hole TO-220SIS
DMT4003SCT Diodes Incorporated

DMT4003SCT

MOSFET N-CH 40V 205A TO220AB

Diodes Incorporated

3,775 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 205A (Tc) 10V 3mOhm @ 90A, 10V 4V @ 250µA 75.6 nC @ 10 V ±20V 6865 pF @ 20 V - 156W -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
TK5A60D(STA4,Q,M) Toshiba Semiconductor and Storage

TK5A60D(STA4,Q,M)

MOSFET N-CH 600V 5A TO220SIS

Toshiba Semiconductor and Storage

2,158 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Ta) 10V 1.43Ohm @ 2.5A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK8A45D(STA4,Q,M) Toshiba Semiconductor and Storage

TK8A45D(STA4,Q,M)

MOSFET N-CH 450V 8A TO220SIS

Toshiba Semiconductor and Storage

2,763 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 8A (Ta) 10V 900mOhm @ 4A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK7A55D(STA4,Q,M) Toshiba Semiconductor and Storage

TK7A55D(STA4,Q,M)

MOSFET N-CH 550V 7A TO220SIS

Toshiba Semiconductor and Storage

2,840 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 7A (Ta) 10V 1.25Ohm @ 3.5A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK3A65D(STA4,Q,M) Toshiba Semiconductor and Storage

TK3A65D(STA4,Q,M)

MOSFET N-CH 650V 3A TO220SIS

Toshiba Semiconductor and Storage

4,326 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 3A (Ta) 10V 2.25Ohm @ 1.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK5A65DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK5A65DA(STA4,Q,M)

MOSFET N-CH 650V 4.5A TO220SIS

Toshiba Semiconductor and Storage

3,046 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Ta) 10V 1.67Ohm @ 2.3A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK5A65D(STA4,Q,M) Toshiba Semiconductor and Storage

TK5A65D(STA4,Q,M)

MOSFET N-CH 650V 5A TO220SIS

Toshiba Semiconductor and Storage

3,511 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Ta) 10V 1.43Ohm @ 2.5A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
STF80N600K6 STMicroelectronics

STF80N600K6

N-CHANNEL 800 V, 515 MOHM TYP.,

STMicroelectronics

3,292 -
Datasheet ECOPACK® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 100µA 10.7 nC @ 10 V ±30V 540 pF @ 400 V - 23W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
DMTH4005SCT Diodes Incorporated

DMTH4005SCT

MOSFET N-CH 40V 100A TO220AB

Diodes Incorporated

3,570 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.7mOhm @ 50A, 10V 4V @ 250µA 49.1 nC @ 10 V ±20V 3062 pF @ 20 V - 2.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220-3
TK11A50D(STA4,Q,M) Toshiba Semiconductor and Storage

TK11A50D(STA4,Q,M)

MOSFET N-CH 500V 11A TO220SIS

Toshiba Semiconductor and Storage

4,561 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Ta) 10V 600mOhm @ 5.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK56E12N1,S1X Toshiba Semiconductor and Storage

TK56E12N1,S1X

MOSFET N CH 120V 56A TO-220

Toshiba Semiconductor and Storage

3,620 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Ta) 10V 7mOhm @ 28A, 10V 4V @ 1mA 69 nC @ 10 V ±20V 4200 pF @ 60 V - 168W (Tc) 150°C (TJ) - - Through Hole TO-220
TK8Q65W,S1Q Toshiba Semiconductor and Storage

TK8Q65W,S1Q

MOSFET N-CH 650V 7.8A IPAK

Toshiba Semiconductor and Storage

1,948 -
Datasheet DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 670mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 80W (Tc) 150°C (TJ) - - Through Hole IPAK
TK8A55DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK8A55DA(STA4,Q,M)

MOSFET N-CH 550V 7.5A TO220SIS

Toshiba Semiconductor and Storage

3,939 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 7.5A (Ta) 10V 1.07Ohm @ 3.8A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK18A30D,S5X Toshiba Semiconductor and Storage

TK18A30D,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

2,689 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 300 V 18A (Ta) 10V 139mOhm @ 9A, 10V 3.5V @ 1mA 60 nC @ 10 V ±20V 2600 pF @ 100 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK11A45D(STA4,Q,M) Toshiba Semiconductor and Storage

TK11A45D(STA4,Q,M)

MOSFET N-CH 450V 11A TO220SIS

Toshiba Semiconductor and Storage

1,932 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 11A (Ta) 10V 620mOhm @ 5.5A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK5Q60W,S1VQ Toshiba Semiconductor and Storage

TK5Q60W,S1VQ

MOSFET N CH 600V 5.4A IPAK

Toshiba Semiconductor and Storage

3,937 -
Datasheet DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Ta) 10V 900mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Through Hole IPAK
TK7A60W,S4VX Toshiba Semiconductor and Storage

TK7A60W,S4VX

MOSFET N-CH 600V 7A TO220SIS

Toshiba Semiconductor and Storage

3,943 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
Total 36322 Record«Prev1... 747748749750751752753754...1817Next»
BOM & COMPONENT SOURCING

Need Pricing or Stock Support for FETs, MOSFETs?

Submit your required part numbers, manufacturers and quantities to receive stock availability, pricing, lead-time and sourcing support. Our team assists with active components, shortage parts, obsolete models and one-stop BOM procurement.