Professional testing equipment and reports to ensure product quality.
ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
G3S06503A Global Power Technology-GPT

G3S06503A

DIODE SIC 650V 11.5A TO220AC

Global Power Technology-GPT

390 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 11.5A 1.7 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 181pF @ 0V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
G3S06504C Global Power Technology-GPT

G3S06504C

DIODE SIL CARB 650V 11.5A TO252

Global Power Technology-GPT

3,978 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Active SiC (Silicon Carbide) Schottky 650 V 11.5A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 181pF @ 0V, 1MHz - - Surface Mount TO-252 -55°C ~ 175°C
G3S06504A Global Power Technology-GPT

G3S06504A

DIODE SIC 650V 11.5A TO220AC

Global Power Technology-GPT

2,479 -
Datasheet - TO-220-2 Cut Tape (CT) Active SiC (Silicon Carbide) Schottky 650 V 11.5A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 181pF @ 0V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
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