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ELECTRONIC COMPONENTS
Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
65DN06B02ELEMXPSA1DIODE GP 600V 15130A D-ELEM-1 |
2,130 | - |
|
Datasheet | - | DO-200AC, K-PUK | Bulk | Active | Standard | 600 V | 15130A | 890 mV @ 8000 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 600 V | - | - | - | Clamp On | BG-D-ELEM-1 | 180°C (Max) |
|
IDH06SG60CXKSA2DIODE SIL CARB 600V 6A TO220-2-1 |
1,816 | - |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 6A | 2.3 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 130pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
46DN06B02ELEMXPSA1DIODE GP 600V 10450A D-ELEM-1 |
4,395 | - |
|
Datasheet | - | DO-200AC, K-PUK | Bulk | Active | Standard | 600 V | 10450A | 980 mV @ 6000 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 600 V | - | - | - | Clamp On | BG-D-ELEM-1 | 180°C (Max) |
|
IDYH10G200C5XKSA1SIC DISCRETE |
3,077 | - |
|
Datasheet | CoolSiC™ | TO-247-4 Variant | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 35A | 1.75 V @ 10 A | - | - | 150 µA @ 2000 V | 1140pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-U04 | -55°C ~ 175°C |
|
|
IDYH25G200C5XKSA1SIC DISCRETE |
1,139 | - |
|
Datasheet | CoolSiC™ | TO-247-4 Variant | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 77A | 1.75 V @ 25 A | - | - | 375 µA @ 2000 V | 1140pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-U04 | -55°C ~ 175°C |
|
|
IDYH40G200C5XKSA1SIC DISCRETE |
1,316 | - |
|
Datasheet | CoolSiC™ | TO-247-4 Variant | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 114A | 1.75 V @ 40 A | - | - | 600 µA @ 2000 V | 4550pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-U04 | -55°C ~ 175°C |
|
|
ND89N12KHPSA1DIODE GEN PURP 1.2KV 89A PB20-1 |
1,335 | - |
|
Datasheet | - | Module | Tray | Active | Standard | 1200 V | 89A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1200 V | - | - | - | Chassis Mount | BG-PB20-1 | -40°C ~ 135°C |
|
|
ND89N16KHPSA1DIODE GEN PURP 1.6KV 89A PB20-1 |
4,450 | - |
|
Datasheet | - | Module | Tray | Active | Standard | 1600 V | 89A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1600 V | - | - | - | Chassis Mount | BG-PB20-1 | -40°C ~ 135°C |
|
D1800N48TVFXPSA1DIODE GEN PURP 4.8KV 1800A |
2,230 | - |
|
Datasheet | - | DO-200AC, K-PUK | Tray | Active | Standard | 4800 V | 1800A | 1.32 V @ 1500 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 4800 V | - | - | - | Clamp On | - | -40°C ~ 160°C |
|
DZ1070N22KHPSA3DIODE GP 2.2KV 1100A MODULE |
1,088 | - |
|
Datasheet | - | Module | Tray | Active | Standard | 2200 V | 1100A | 1.11 V @ 3000 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 2200 V | - | - | - | Chassis Mount | Module | -40°C ~ 150°C |
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