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ELECTRONIC COMPONENTS
Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IV1D06006O2DIODE SIL CARB 650V 17.4A TO220 |
132 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 17.4A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 212pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
IV1D06006P3DIODE SIC 650V 16.7A TO252-3 |
2,481 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16.7A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 224pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-3 | -55°C ~ 175°C |
|
IV1D12005O2DIODE SIL CARB 1.2KV 17A TO220-2 |
164 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 17A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 320pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
IV1D12010O2DIODE SIL CARB 1.2KV 28A TO220-2 |
190 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 28A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 575pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
IV1D12010T2DIODE SIL CARB 1.2KV 30A TO247-2 |
107 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 575pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
IV1D12015T2DIODE SIL CARB 1.2KV 44A TO247-2 |
120 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 44A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1200 V | 888pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
IV1D12020T2DIODE SIL CARB 1.2KV 54A TO247-2 |
110 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 54A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 1114pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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