Professional testing equipment and reports to ensure product quality.
ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N4247 Microchip Technology

1N4247

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

338 -
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 600 V - - - Through Hole A, Axial -65°C ~ 175°C
1N3595UR-1 Microchip Technology

1N3595UR-1

DIODE GP 125V 150MA DO213AA

Microchip Technology

624 -
Datasheet - DO-213AA Bulk Active Standard 125 V 150mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - - - Surface Mount DO-213AA -65°C ~ 175°C
APT15DQ120BHBG Microchip Technology

APT15DQ120BHBG

DIODE GEN PURP 1.2KV 15A TO247-3

Microchip Technology

101 -
Datasheet - TO-247-3 Tube Active Standard 1200 V 15A 3.5 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 240 ns 100 µA @ 1200 V - - - Through Hole TO-247-3 -55°C ~ 175°C
MSC030SDA070K Microchip Technology

MSC030SDA070K

DIODE SIL CARB 700V 30A TO220-2

Microchip Technology

119 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 700 V 30A 1.5 V @ 30 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-220-2 -
MSC015SDA120B Microchip Technology

MSC015SDA120B

DIODE SCHOTTKY 1.2KV 15A TO247

Microchip Technology

134 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.5 V @ 15 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-247 -
JANTX1N3595UR-1 Microchip Technology

JANTX1N3595UR-1

DIODE GP 125V 150MA DO213AA

Microchip Technology

141 -
Datasheet - DO-213AA Bulk Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - Military MIL-S-19500-241 Surface Mount DO-213AA -65°C ~ 175°C
MSC020SDA120K Microchip Technology

MSC020SDA120K

DIODE SIL CARB 1.2KV 49A TO220-2

Microchip Technology

105 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 49A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1130pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UES1104 Microchip Technology

UES1104

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

105 -
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V - - - Through Hole A, Axial -55°C ~ 150°C
MNS1N6627US/TR Microchip Technology

MNS1N6627US/TR

DIODE GEN PURP 440V 1.75A E-MELF

Microchip Technology

483 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 440 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 440 V - - - Surface Mount E-MELF -65°C ~ 150°C
1N4153UR/TR Microchip Technology

1N4153UR/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

610 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - -
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