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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
GP3D020A065A SemiQ

GP3D020A065A

DIODE SIL CARB 650V 20A TO220-2

SemiQ

8,484 -
Datasheet Amp+™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.65 V @ 30 A No Recovery Time > 500mA (Io) - 75 µA @ 650 V 1247pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-52PF120 Vishay General Semiconductor - Diodes Division

VS-52PF120

DIODE GEN PURP 1.2KV 50A DO203AB

Vishay General Semiconductor - Diodes Division

5,253 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 50A 1.4 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
VS-52PFR120 Vishay General Semiconductor - Diodes Division

VS-52PFR120

DIODE GP REV 1.2KV 50A DO203AB

Vishay General Semiconductor - Diodes Division

6,816 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 50A 1.4 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
VS-95PFR140 Vishay General Semiconductor - Diodes Division

VS-95PFR140

DIODE GP REV 1.4KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

8,319 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1400 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
JAN1N4248 Microchip Technology

JAN1N4248

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

3,150 -
Datasheet - A, Axial Bulk Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 800 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
1N4942/TR Microchip Technology

1N4942/TR

DIODE GEN PURP 200V 1A

Microchip Technology

4,794 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V 45pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
1N4942-1/TR Microchip Technology

1N4942-1/TR

DIODE GEN PURP 200V 1A

Microchip Technology

4,520 -
Datasheet - Axial Tape & Reel (TR) Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V 45pF @ 12V, 1MHz - - Through Hole - -65°C ~ 175°C
1N4942E3 Microchip Technology

1N4942E3

DIODE GEN PURP 200V 1A

Microchip Technology

6,219 -
Datasheet - Axial Bulk Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V 45pF @ 12V, 1MHz - - Through Hole - -65°C ~ 175°C
VS-1N1190RA Vishay General Semiconductor - Diodes Division

VS-1N1190RA

DIODE GEN PURP 600V 40A DO203AB

Vishay General Semiconductor - Diodes Division

7,537 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 40A 1.3 V @ 126 A Standard Recovery >500ns, > 200mA (Io) - 2.5 mA @ 600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 200°C
JANTX1N5617/TR Microchip Technology

JANTX1N5617/TR

DIODE GEN PURP 400V 1A

Microchip Technology

9,027 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V 35pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
1N3613/TR Microchip Technology

1N3613/TR

DIODE GEN PURP 600V 1A

Microchip Technology

4,524 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 600 V - - - Through Hole A, Axial -65°C ~ 175°C
1N646UR-1 Microchip Technology

1N646UR-1

SILICON SWITCHING DIODES

Microchip Technology

9,540 -
Datasheet * - Bulk Active - - - - - - - - - - - - -
1N3600UR Microchip Technology

1N3600UR

DIODE GEN PURP 75V 300MA DO213AA

Microchip Technology

8,129 -
Datasheet - DO-213AA Bulk Active Standard 75 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V 2.5pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 175°C
JAN1N5620 Microchip Technology

JAN1N5620

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

2,024 -
Datasheet - A, Axial Bulk Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JANTX1N3614 Microchip Technology

JANTX1N3614

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

7,734 -
Datasheet - A, Axial Bulk Active Standard 800 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 800 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JANHCA1N5712 Microchip Technology

JANHCA1N5712

DIODE SCHOTTKY 20V 75MA DO35

Microchip Technology

6,598 -
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 20 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
JAN1N5552/TR Microchip Technology

JAN1N5552/TR

DIODE GEN PURP 600V 3A

Microchip Technology

7,788 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
GC15MPS12-220 GeneSiC Semiconductor

GC15MPS12-220

DIODE SIL CARB 1.2KV 82A TO220-2

GeneSiC Semiconductor

9,148 -
Datasheet SiC Schottky MPS™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 82A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 14 µA @ 1200 V 1089pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-95PFR160 Vishay General Semiconductor - Diodes Division

VS-95PFR160

DIODE GP REV 1.6KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

4,375 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1600 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
VS-40HFLR10S05 Vishay General Semiconductor - Diodes Division

VS-40HFLR10S05

DIODE GP REV 100V 40A DO203AB

Vishay General Semiconductor - Diodes Division

8,434 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 100 V 40A 1.95 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 100 µA @ 100 V - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
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