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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANTXV1N5617/TR Microchip Technology

JANTXV1N5617/TR

DIODE GEN PURP 400V 1A

Microchip Technology

6,732 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V 35pF @ 12V, 1MHz Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 175°C
JANTXV1N5809US/TR Microchip Technology

JANTXV1N5809US/TR

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

6,776 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
MNS1N6640US Microchip Technology

MNS1N6640US

DIODE GEN PURP 50V 300MA D-5D

Microchip Technology

3,686 -
Datasheet - SQ-MELF, D Bulk Active Standard 50 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Surface Mount D-5D -65°C ~ 175°C
JANTX1N5187 Microchip Technology

JANTX1N5187

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

4,103 -
Datasheet - B, Axial Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 2 µA @ 200 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JANTX1N3595AUR-1/TR Microchip Technology

JANTX1N3595AUR-1/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

7,457 -
Datasheet - DO-213AA Tape & Reel (TR) Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - Military MIL-S-19500-241 Surface Mount DO-213AA -65°C ~ 175°C
CDLL5712/TR Microchip Technology

CDLL5712/TR

DIODE SCHOTTKY 16V 75MA DO213AA

Microchip Technology

6,976 -
Datasheet - DO-213AA Tape & Reel (TR) Active Schottky 16 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 150°C
DHG60I600HA IXYS

DHG60I600HA

DIODE GEN PURP 600V 60A TO247

IXYS

2,511 -
Datasheet - TO-247-2 Tube Active Standard 600 V 60A - Standard Recovery >500ns, > 200mA (Io) - - - - - Through Hole TO-247 -55°C ~ 150°C
FR40B02 GeneSiC Semiconductor

FR40B02

DIODE GEN PURP 100V 40A DO5

GeneSiC Semiconductor

5,628 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40B05 GeneSiC Semiconductor

FR40B05

DIODE GEN PURP 100V 40A DO5

GeneSiC Semiconductor

2,605 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40D02 GeneSiC Semiconductor

FR40D02

DIODE GEN PURP 200V 40A DO5

GeneSiC Semiconductor

2,144 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 200 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40D05 GeneSiC Semiconductor

FR40D05

DIODE GEN PURP 200V 40A DO5

GeneSiC Semiconductor

8,905 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 200 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40G05 GeneSiC Semiconductor

FR40G05

DIODE GEN PURP 400V 40A DO5

GeneSiC Semiconductor

4,095 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 400 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40J02 GeneSiC Semiconductor

FR40J02

DIODE GEN PURP 600V 40A DO5

GeneSiC Semiconductor

7,757 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 600 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40J05 GeneSiC Semiconductor

FR40J05

DIODE GEN PURP 600V 40A DO5

GeneSiC Semiconductor

8,503 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 600 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40K05 GeneSiC Semiconductor

FR40K05

DIODE GEN PURP 800V 40A DO5

GeneSiC Semiconductor

9,242 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 800 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40M05 GeneSiC Semiconductor

FR40M05

DIODE GEN PURP 1KV 40A DO5

GeneSiC Semiconductor

2,705 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1000 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
JANTX1N5187/TR Microchip Technology

JANTX1N5187/TR

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

7,796 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 2 µA @ 200 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
SCS220KGHRC Rohm Semiconductor

SCS220KGHRC

DIODE SIL CARB 1.2KV 20A TO220AC

Rohm Semiconductor

4,869 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 20A 1.6 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 1200 V 1060pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC 175°C (Max)
JANTXV1N5811US/TR Microchip Technology

JANTXV1N5811US/TR

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

6,955 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
SCS120AGC Rohm Semiconductor

SCS120AGC

DIODE SIL CARB 600V 20A TO220AC

Rohm Semiconductor

2,169 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 600 V 860pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
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