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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-121NQ045PBF Vishay General Semiconductor - Diodes Division

VS-121NQ045PBF

DIODE SCHOTTKY 45V 120A D-67

Vishay General Semiconductor - Diodes Division

5,710 -
Datasheet - D-67 HALF-PAK Bulk Active Schottky 45 V 120A 650 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 45 V 5200pF @ 5V, 1MHz - - Chassis Mount D-67 HALF-PAK -
MUR5060R GeneSiC Semiconductor

MUR5060R

DIODE GEN PURP REV 600V 50A DO5

GeneSiC Semiconductor

2,919 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 50A 1 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -55°C ~ 150°C
183NQ100 Vishay General Semiconductor - Diodes Division

183NQ100

DIODE SCHOTTKY 100V 180A D-67

Vishay General Semiconductor - Diodes Division

3,463 -
Datasheet - D-67 HALF-PAK Bulk Obsolete Schottky 100 V 180A 950 mV @ 180 A Fast Recovery =< 500ns, > 200mA (Io) - 4.5 mA @ 100 V 4150pF @ 5V, 1MHz - - Chassis Mount D-67 HALF-PAK -
185NQ015 Vishay General Semiconductor - Diodes Division

185NQ015

DIODE SCHOTTKY 15V 180A D-67

Vishay General Semiconductor - Diodes Division

6,557 -
Datasheet - D-67 HALF-PAK Bulk Obsolete Schottky 15 V 180A 400 mV @ 180 A Fast Recovery =< 500ns, > 200mA (Io) - 60 mA @ 15 V 12300pF @ 5V, 1MHz - - Chassis Mount D-67 HALF-PAK -
BHK3012TV STMicroelectronics

BHK3012TV

DIODE GEN PURP 1.2KV ISOTOP

STMicroelectronics

4,400 -
Datasheet - ISOTOP Bulk Obsolete Standard 1200 V - - Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis Mount ISOTOP® -
JANTX1N5802US Microchip Technology

JANTX1N5802US

DIODE GEN PURP 50V 1A D-5A

Microchip Technology

8,327 -
Datasheet - SQ-MELF, A Bulk Active Standard 50 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
JAN1N5196/TR Microchip Technology

JAN1N5196/TR

DIODE GEN PURP 225V 100MA DO35

Microchip Technology

2,436 -
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 225 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 250 V - Military MIL-PRF-19500/118 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JAN1N5712UR-1/TR Microchip Technology

JAN1N5712UR-1/TR

DIODE SCHOTTKY 16V 75MA DO213AA

Microchip Technology

9,200 -
Datasheet - DO-213AA Tape & Reel (TR) Active Schottky 16 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Surface Mount DO-213AA -65°C ~ 150°C
242NQ030 Vishay General Semiconductor - Diodes Division

242NQ030

DIODE SCHOTTKY 30V 240A D-67

Vishay General Semiconductor - Diodes Division

4,694 -
Datasheet - D-67 HALF-PAK Bulk Obsolete Schottky 30 V 240A 510 mV @ 240 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 30 V 14800pF @ 5V, 1MHz - - Chassis Mount D-67 HALF-PAK -
JANTXV1N5553US Microchip Technology

JANTXV1N5553US

DIODE GEN PURP 800V 3A B SQ-MELF

Microchip Technology

9,867 -
Datasheet - SQ-MELF, B Bulk Active Standard 800 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
1N6074US Microchip Technology

1N6074US

DIODE GEN PURP 100V 3A D-5A

Microchip Technology

9,257 -
Datasheet - SQ-MELF, A Bulk Active Standard 100 V 3A 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 100 V - - - Surface Mount D-5A -65°C ~ 155°C
JAN1N5807URS Microchip Technology

JAN1N5807URS

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

6,683 -
Datasheet - SQ-MELF, B Bulk Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N5809URS Microchip Technology

JAN1N5809URS

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

3,645 -
Datasheet - SQ-MELF, B Bulk Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N5811URS Microchip Technology

JAN1N5811URS

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

4,177 -
Datasheet - SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N5802US/TR Microchip Technology

JANTX1N5802US/TR

DIODE GEN PURP 50V 1A D-5A

Microchip Technology

7,951 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 50 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
240NQ045 Vishay General Semiconductor - Diodes Division

240NQ045

DIODE SCHOTTKY 45V 240A D-67

Vishay General Semiconductor - Diodes Division

9,222 -
Datasheet - D-67 HALF-PAK Bulk Obsolete Schottky 45 V 240A 610 mV @ 240 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 45 V 10300pF @ 5V, 1MHz - - Chassis Mount D-67 HALF-PAK -
1N6642UB Microchip Technology

1N6642UB

DIODE GEN PURP UB

Microchip Technology

4,260 -
Datasheet - 4-SMD, No Lead Bulk Active Standard - - 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns - 5pF @ 0V, 1MHz - - Surface Mount UB -
JANTX1N6628/TR Microchip Technology

JANTX1N6628/TR

DIODE GEN PURP 660V 1.75A

Microchip Technology

7,635 -
Datasheet - E, Axial Tape & Reel (TR) Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTX1N6628 Microchip Technology

JANTX1N6628

DIODE GEN PURP 660V 1.75A AXIAL

Microchip Technology

7,394 -
Datasheet - E, Axial Bulk Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTXV1N5554US/TR Microchip Technology

JANTXV1N5554US/TR

DIODE GEN PURP 1KV 3A D-5B

Microchip Technology

4,068 -
Datasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 1000 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1 V - Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
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