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ELECTRONIC COMPONENTS
Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PCDB0865G1_R2_00001650V SIC SCHOTTKY BARRIER DIODE |
2,390 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 296pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
|
|
PCDD0865G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE |
2,977 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 296pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
|
PCDP0865G1_T0_00001TO-220AC, SIC |
1,995 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 296pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDP1665G1_T0_00001TO-220AC, SIC |
2,000 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 618pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDP1065G1_T0_00001TO-220AC, SIC |
1,478 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDB1065G1_R2_00001650V SIC SCHOTTKY BARRIER DIODE |
4,000 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
|
|
PCDD1065G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE |
2,797 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
|
PCDP08120G1_T0_00001TO-220AC, SIC |
2,000 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 418pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDP2065G1_T0_00001TO-220AC, SIC |
2,000 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 747pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDP10120G1_T0_00001TO-220AC, SIC |
1,984 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 529pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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