Professional testing equipment and reports to ensure product quality.
ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
D2450N02TXPSA1 Infineon Technologies

D2450N02TXPSA1

DIODE GEN PURP 200V 2450A

Infineon Technologies

4,896 -
Datasheet - DO-200AB, B-PUK Tray Obsolete Standard 200 V 2450A 880 mV @ 2000 A Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 200 V - - - Clamp On - -40°C ~ 180°C
RA201236XX Powerex Inc.

RA201236XX

DIODE GP 1.2KV 3600A POW-R-DISC

Powerex Inc.

4,232 -
Datasheet - DO-200AD Bulk Discontinued at Digi-Key Standard 1200 V 3600A 1.15 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) 22 µs 200 mA @ 1200 V - - - Chassis Mount Pow-R-Disc -
688-18 Microchip Technology

688-18

DIODE GEN PURP 18KV 350MA

Microchip Technology

4,472 -
Datasheet - Module Bulk Active Standard 18000 V 350mA 30 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) 500 ns 2 µA @ 18000 V - - - Chassis Mount - -65°C ~ 150°C
688-10 Microchip Technology

688-10

DIODE GEN PURP 10KV 600MA

Microchip Technology

7,665 -
Datasheet - Module Bulk Active Standard 10000 V 600mA 17 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) 500 ns 2 µA @ 10000 V - - - Chassis Mount - -65°C ~ 150°C
688-25 Microchip Technology

688-25

DIODE GEN PURP 25KV 200MA

Microchip Technology

6,911 -
Datasheet - Module Bulk Active Standard 25000 V 200mA 42 V @ 400 mA Small Signal =< 200mA (Io), Any Speed 500 ns 2 µA @ 25000 V - - - Chassis Mount - -65°C ~ 150°C
688-12 Microchip Technology

688-12

DIODE GEN PURP 12KV 500MA

Microchip Technology

9,560 -
Datasheet - Module Bulk Active Standard 12000 V 500mA 20 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) 500 ns 2 µA @ 12000 V - - - Chassis Mount - -65°C ~ 150°C
688-20 Microchip Technology

688-20

DIODE GEN PURP 20KV 300MA

Microchip Technology

9,068 -
Datasheet - Module Bulk Active Standard 20000 V 300mA 34 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) 500 ns 2 µA @ 20000 V - - - Chassis Mount - -65°C ~ 150°C
688-15 Microchip Technology

688-15

DIODE GEN PURP 15KV 400MA

Microchip Technology

6,659 -
Datasheet - Module Bulk Active Standard 15000 V 400mA 25 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) 500 ns 2 µA @ 15000 V - - - Chassis Mount - -65°C ~ 150°C
1N6776 Microchip Technology

1N6776

DIODE GEN PURP 150V 15A TO257

Microchip Technology

4,094 -
Datasheet - TO-257-3 Bulk Active Standard 150 V 15A 1.15 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 800 mV 300pF @ 5V, 1MHz - - Through Hole TO-257 -65°C ~ 150°C
1N6777 Microchip Technology

1N6777

DIODE GEN PURP 200V 15A TO257

Microchip Technology

6,493 -
Datasheet - TO-257-3 Bulk Active Standard 200 V 15A 1.15 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 800 mV 300pF @ 5V, 1MHz - - Through Hole TO-257 -65°C ~ 150°C
1N6778 Microchip Technology

1N6778

DIODE GEN PURP 400V 15A TO257

Microchip Technology

2,182 -
Datasheet - TO-257-3 Bulk Active Standard 400 V 15A 1.6 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 320 V 300pF @ 5V, 1MHz - - Through Hole TO-257 150°C (Max)
1N6779 Microchip Technology

1N6779

DIODE GEN PURP 600V 15A TO257

Microchip Technology

5,430 -
Datasheet - TO-257-3 Bulk Active Standard 600 V 15A 1.6 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 480 V 300pF @ 5V, 1MHz - - Through Hole TO-257 150°C (Max)
1N6772 Microchip Technology

1N6772

UFR,FRR

Microchip Technology

2,606 -
Datasheet * - Bulk Active - - - - - - - - - - - - -
1N6773 Microchip Technology

1N6773

UFR,FRR

Microchip Technology

2,741 -
Datasheet * - Bulk Active - - - - - - - - - - - - -
D2200N22TVFXPSA1 Infineon Technologies

D2200N22TVFXPSA1

DIODE GEN PURP 2200A D7526K0-1

Infineon Technologies

3,887 -
Datasheet - DO-200AC, K-PUK Tray Active Standard - 2200A - Standard Recovery >500ns, > 200mA (Io) - 150 mA @ 2200 V - - - Clamp On BG-D7526K0-1 -40°C ~ 160°C
GAP05SLT80-220 GeneSiC Semiconductor

GAP05SLT80-220

DIODE SCHOTTKY 8KV 50MA AXIAL

GeneSiC Semiconductor

9,212 -
Datasheet - Axial Tube Obsolete SiC (Silicon Carbide) Schottky 8000 V 50mA 4.6 V @ 50 mA No Recovery Time > 500mA (Io) 0 ns 3.8 µA @ 8000 V 25pF @ 1V, 1MHz - - Through Hole - -55°C ~ 175°C
RA201248XX Powerex Inc.

RA201248XX

DIODE GP 1.2KV 4800A POW-R-DISC

Powerex Inc.

8,399 -
Datasheet - DO-200AD Bulk Discontinued at Digi-Key Standard 1200 V 4800A 1.05 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) 16 µs 200 mA @ 1200 V - - - Chassis Mount Pow-R-Disc -
RA201436XX Powerex Inc.

RA201436XX

DIODE GP 1.4KV 3600A POW-R-DISC

Powerex Inc.

4,362 -
Datasheet - DO-200AD Bulk Discontinued at Digi-Key Standard 1400 V 3600A 1.15 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) 22 µs 200 mA @ 1400 V - - - Chassis Mount Pow-R-Disc -
JANHCA1N6702 Microchip Technology

JANHCA1N6702

DIODE SCHOTTKY 40V 5A AXIAL

Microchip Technology

2,613 -
Datasheet - Axial Bulk Active Schottky 40 V 5A 470 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 40 V - - - Through Hole Axial -65°C ~ 125°C
1N6774 Microchip Technology

1N6774

DIODE GEN PURP 50V 15A TO257

Microchip Technology

5,977 -
Datasheet - TO-257-3 Bulk Active Standard 50 V 15A 1.15 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 800 mV 300pF @ 5V, 1MHz - - Through Hole TO-257 -65°C ~ 150°C
Total 47618 Record«Prev1... 19001901190219031904190519061907...2381Next»
BOM & COMPONENT SOURCING

Need Pricing or Stock Support for Single Diodes?

Submit your required part numbers, manufacturers and quantities to receive stock availability, pricing, lead-time and sourcing support. Our team assists with active components, shortage parts, obsolete models and one-stop BOM procurement.