Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDH12S60CAKSA1 DIODE SIL CARB 600V 12A TO220-2 Infineon Technologies	8,966	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	160 µA @ 600 V	530pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDH16S60CAKSA1 DIODE SIL CARB 600V 16A TO220-2 Infineon Technologies	3,535	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	650pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
MMBD914LT3HTMA1 DIODE GEN PURP 100V 250MA SOT23 Infineon Technologies	4,777	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	Standard	100 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 75 V	2pF @ 0V, 1MHz	-	-	Surface Mount	PG-SOT23	150°C (Max)
SDB06S60 DIODE SIL CARB 600V 6A TO263 Infineon Technologies	3,281	-	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	600 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	300pF @ 0V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
SDP10S30 DIODE SIL CARB 300V 10A TO220-3 Infineon Technologies	8,076	-	RFQ	Datasheet	CoolSiC™+	TO-220-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	300 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 300 V	600pF @ 0V, 1MHz	-	-	Through Hole	PG-TO220-3	-55°C ~ 175°C
SDT10S60 DIODE SIL CARB 600V 10A TO220-2 Infineon Technologies	4,537	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	350 µA @ 600 V	350pF @ 0V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
SIDC03D60F6X1SA2 DIODE GP 600V 6A WAFER Infineon Technologies	4,457	-	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	6A	1.6 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 150°C
SIDC04D60F6X1SA3 DIODE GP 600V 9A WAFER Infineon Technologies	6,676	-	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	9A	1.6 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 150°C
SIDC06D60E6X1SA3 DIODE GP 600V 10A WAFER Infineon Technologies	2,009	-	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	10A	1.25 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
SIDC06D60F6X1SA3 DIODE GP 600V 15A WAFER Infineon Technologies	4,017	-	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	15A	1.6 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 150°C
SIDC07D60E6X1SA1 DIODE GP 600V 15A WAFER Infineon Technologies	4,060	-	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	15A	1.25 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	250 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
SIDC07D60F6X1SA2 DIODE GP 600V 22.5A WAFER Infineon Technologies	6,249	-	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	22.5A	1.6 V @ 22.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 150°C
SIDC09D60E6X1SA1 DIODE GP 600V 20A WAFER Infineon Technologies	9,064	-	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	20A	1.7 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
SIDC09D60F6X1SA2 DIODE GP 600V 30A WAFER Infineon Technologies	8,573	-	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	30A	1.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 175°C
SIDC14D120E6X1SA4 DIODE GP 1.2KV 15A WAFER Infineon Technologies	5,673	-	RFQ	Datasheet	-	Die	Bulk	Discontinued at Digi-Key	Standard	1200 V	15A	1.9 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 1200 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
SIDC14D60E6X1SA1 DIODE GP 600V 30A WAFER Infineon Technologies	8,648	-	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	30A	1.25 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
SIDC14D60F6X1SA2 DIODE GP 600V 45A WAFER Infineon Technologies	8,220	-	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	45A	1.6 V @ 45 A	Fast Recovery =< 500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 150°C
SIDC23D60E6X1SA4 DIODE GP 600V 50A WAFER Infineon Technologies	5,159	-	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	50A	1.25 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
SIDC42D60E6X1SA1 DIODE GP 600V 100A WAFER Infineon Technologies	7,132	-	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	100A	1.25 V @ 100 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
SIDC56D60E6X1SA1 DIODE GP 600V 150A WAFER Infineon Technologies	2,187	-	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	150A	1.25 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C

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