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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
UJ3D1725K2 Qorvo

UJ3D1725K2

DIODE SIL CARB 1.7KV 25A TO247-2

Qorvo

4,349 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 25A 1.7 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 360 µA @ 1700 V 1500pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
UJ3D1250K2 Qorvo

UJ3D1250K2

DIODE SIL CARB 1.2KV 50A TO247-2

Qorvo

14,813 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 50A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 1200 V 2340pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
UJ3D1210TS onsemi

UJ3D1210TS

DIODE SIL CARB 1200V 10A TO220

onsemi

9,385

1+:$4.55500

10+:$3.10450

50+:$2.48450

100+:$2.28520

500+:$1.93634

Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 1200 V 510pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D06560KSD Qorvo

UJ3D06560KSD

DIODE SIL CARB 650V 30A TO247-3

Qorvo

6,369 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 740 µA @ 650 V 1980pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
UJ3D1250K Qorvo

UJ3D1250K

DIODE SIL CARB 1.2KV 50A TO247-3

Qorvo

6,427 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 50A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 1200 V 2340pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
UJ3D1202TS Qorvo

UJ3D1202TS

DIODE SIL CARB 1.2KV 2A TO220-2

Qorvo

16,006 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 2A 1.6 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 22 µA @ 1200 V 109pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D06506TS onsemi

UJ3D06506TS

DIODE SIL CARB 650V 6A TO220-2

onsemi

56,044

1+:$2.23000

50+:$1.13750

100+:$1.03195

500+:$0.84694

1000+:$0.78752

2000+:$0.73759

5000+:$0.70625

Datasheet Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 196pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D06510TS Qorvo

UJ3D06510TS

DIODE SIL CARB 650V 10A TO220-2

Qorvo

11,657 -
Datasheet Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 327pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D1205TS Qorvo

UJ3D1205TS

DIODE SIL CARB 1.2KV 5A TO220-2

Qorvo

27,393 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.6 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 1200 V 250pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D06520TS Qorvo

UJ3D06520TS

DIODE SIL CARB 650V 20A TO220-2

Qorvo

6,004 -
Datasheet Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 654pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
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