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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N5401GHA0G Taiwan Semiconductor Corporation

1N5401GHA0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

2,389 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Discontinued at Digi-Key Standard 100 V 3A 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 25pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
1N5402G A0G Taiwan Semiconductor Corporation

1N5402G A0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

9,320 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 200 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 150°C
1N5402GHA0G Taiwan Semiconductor Corporation

1N5402GHA0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

5,431 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 200 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 25pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
1N5406GHA0G Taiwan Semiconductor Corporation

1N5406GHA0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

5,199 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 600 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 25pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
1N5407GHA0G Taiwan Semiconductor Corporation

1N5407GHA0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation

7,699 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Discontinued at Digi-Key Standard 800 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 25pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
1N5822 A0G Taiwan Semiconductor Corporation

1N5822 A0G

DIODE SCHOTTKY 40V 3A DO201AD

Taiwan Semiconductor Corporation

4,902 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Schottky 40 V 3A 525 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V 200pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 125°C
1T4G A0G Taiwan Semiconductor Corporation

1T4G A0G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

7,410 -
Datasheet - T-18, Axial Tape & Box (TB) Active Standard 400 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 10pF @ 4V, 1MHz - - Through Hole TS-1 -55°C ~ 150°C
1T5G A0G Taiwan Semiconductor Corporation

1T5G A0G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

4,347 -
Datasheet - T-18, Axial Tape & Box (TB) Active Standard 600 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 10pF @ 4V, 1MHz - - Through Hole TS-1 -55°C ~ 150°C
1T7G A0G Taiwan Semiconductor Corporation

1T7G A0G

DIODE GEN PURP 1A TS-1

Taiwan Semiconductor Corporation

5,506 -
Datasheet - T-18, Axial Tape & Box (TB) Active Standard 1000 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 10pF @ 4V, 1MHz - - Through Hole TS-1 -55°C ~ 150°C
2A02G A0G Taiwan Semiconductor Corporation

2A02G A0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

4,489 -
Datasheet - DO-204AC, DO-15, Axial Tape & Box (TB) Active Standard 100 V 2A 1.1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 15pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
2A07GHA0G Taiwan Semiconductor Corporation

2A07GHA0G

DIODE GEN PURP 2A DO204AC

Taiwan Semiconductor Corporation

3,929 -
Datasheet - DO-204AC, DO-15, Axial Tape & Box (TB) Active Standard 1000 V 2A 1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 15pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AC (DO-15) -55°C ~ 150°C
3A100HA0G Taiwan Semiconductor Corporation

3A100HA0G

DIODE GEN PURP 3A DO204AC

Taiwan Semiconductor Corporation

4,176 -
Datasheet - DO-204AC, DO-15, Axial Tape & Box (TB) Active Standard 1000 V 3A 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 27pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AC (DO-15) -55°C ~ 150°C
3A60HA0G Taiwan Semiconductor Corporation

3A60HA0G

DIODE GEN PURP 600V 3A DO204AC

Taiwan Semiconductor Corporation

7,092 -
Datasheet - DO-204AC, DO-15, Axial Tape & Box (TB) Active Standard 600 V 3A 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 27pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AC (DO-15) -55°C ~ 150°C
6A100G A0G Taiwan Semiconductor Corporation

6A100G A0G

DIODE GEN PURP 1KV 6A R-6

Taiwan Semiconductor Corporation

4,936 -
Datasheet - R-6, Axial Tape & Box (TB) Active Standard 1000 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
6A10G A0G Taiwan Semiconductor Corporation

6A10G A0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

9,402 -
Datasheet - R-6, Axial Tape & Box (TB) Active Standard 100 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
6A10GHA0G Taiwan Semiconductor Corporation

6A10GHA0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

6,202 -
Datasheet - R-6, Axial Tape & Box (TB) Active Standard 100 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole R-6 -55°C ~ 150°C
6A40G A0G Taiwan Semiconductor Corporation

6A40G A0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

8,804 -
Datasheet - R-6, Axial Tape & Box (TB) Active Standard 400 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
6A40GHA0G Taiwan Semiconductor Corporation

6A40GHA0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

7,417 -
Datasheet - R-6, Axial Tape & Box (TB) Active Standard 400 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole R-6 -55°C ~ 150°C
6A60G A0G Taiwan Semiconductor Corporation

6A60G A0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation

8,673 -
Datasheet - R-6, Axial Tape & Box (TB) Active Standard 600 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
6A80G A0G Taiwan Semiconductor Corporation

6A80G A0G

DIODE GEN PURP 800V 6A R-6

Taiwan Semiconductor Corporation

3,113 -
Datasheet - R-6, Axial Tape & Box (TB) Active Standard 800 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
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