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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
D3501N36TXPSA1 Infineon Technologies

D3501N36TXPSA1

DIODE GEN PURP 4870A D12035K-1

Infineon Technologies

8,811 -
Datasheet - DO-200AE Tray Discontinued at Digi-Key Standard - 4870A - Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 4200 V - - - Chassis Mount BG-D12035K-1 -40°C ~ 160°C
ND104N12KHPSA1 Infineon Technologies

ND104N12KHPSA1

DIODE GEN PURP 1.2KV 104A PB20-1

Infineon Technologies

3,062 -
Datasheet - Module Tray Obsolete Standard 1200 V 104A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1200 V - - - Chassis Mount BG-PB20-1 -40°C ~ 135°C
ND104N18KHPSA1 Infineon Technologies

ND104N18KHPSA1

DIODE GEN PURP 1.8KV 104A PB20-1

Infineon Technologies

2,880 -
Datasheet - Module Tray Obsolete Standard 1800 V 104A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1800 V - - - Chassis Mount BG-PB20-1 -40°C ~ 135°C
ND171N12KHPSA1 Infineon Technologies

ND171N12KHPSA1

DIODE GEN PURP 1.2KV 171A PB34-1

Infineon Technologies

3,215 -
Datasheet - Module Tray Obsolete Standard 1200 V 171A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1200 V - - - Chassis Mount BG-PB34-1 -40°C ~ 135°C
ND242S10KHPSA1 Infineon Technologies

ND242S10KHPSA1

DIODE GEN PURP 1KV 261A PB50ND-1

Infineon Technologies

5,433 -
Datasheet - Module Tray Obsolete Standard 1000 V 261A - Standard Recovery >500ns, > 200mA (Io) - 200 mA @ 1000 V - - - Chassis Mount BG-PB50ND-1 -40°C ~ 135°C
ND260N12KHPSA1 Infineon Technologies

ND260N12KHPSA1

DIODE GP 1.2KV 104A PB50ND-1

Infineon Technologies

7,524 -
Datasheet - Module Tray Obsolete Standard 1200 V 104A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1200 V - - - Chassis Mount BG-PB50ND-1 -40°C ~ 135°C
ND260N14KHPSA1 Infineon Technologies

ND260N14KHPSA1

DIODE GP 1.4KV 260A PB50ND-1

Infineon Technologies

3,319 -
Datasheet - Module Tray Obsolete Standard 1400 V 260A - Standard Recovery >500ns, > 200mA (Io) - 30 mA @ 1400 V - - - Chassis Mount BG-PB50ND-1 -40°C ~ 135°C
ND261N26KHPSA1 Infineon Technologies

ND261N26KHPSA1

DIODE GP 2.6KV 260A PB50ND-1

Infineon Technologies

8,022 -
Datasheet - Module Tray Obsolete Standard 2600 V 260A - Standard Recovery >500ns, > 200mA (Io) - 40 mA @ 2600 V - - - Chassis Mount BG-PB50ND-1 -40°C ~ 135°C
ND350N12KHPSA1 Infineon Technologies

ND350N12KHPSA1

DIODE GP 1.2KV 350A PB50ND-1

Infineon Technologies

4,156 -
Datasheet - Module Tray Obsolete Standard 1200 V 350A - Standard Recovery >500ns, > 200mA (Io) - 30 mA @ 1200 V - - - Chassis Mount BG-PB50ND-1 -40°C ~ 135°C
ND350N16KHPSA1 Infineon Technologies

ND350N16KHPSA1

DIODE GP 1.6KV 350A PB50ND-1

Infineon Technologies

2,715 -
Datasheet - Module Tray Obsolete Standard 1600 V 350A - Standard Recovery >500ns, > 200mA (Io) - 30 mA @ 1600 V - - - Chassis Mount BG-PB50ND-1 -40°C ~ 135°C
BAS321/8X Nexperia USA Inc.

BAS321/8X

DIODE GEN PURP 200V 250MA SOD323

Nexperia USA Inc.

7,106 -
Datasheet - SC-76, SOD-323 Tape & Reel (TR) Obsolete Standard 200 V 250mA 1.25 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 nA @ 200 V 2pF @ 0V, 1MHz - - Surface Mount SOD-323 150°C (Max)
MSC750SMA120S Microsemi Corporation

MSC750SMA120S

MOSFET N-CH 1200V D3PAK

Microsemi Corporation

9,384 -
Datasheet * - Bulk Obsolete - - - - - - - - - - - - -
APT10SCE120B Microsemi Corporation

APT10SCE120B

DIODE SIL CARB 1.2KV 43A TO247

Microsemi Corporation

7,604 -
Datasheet - TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 43A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 630pF @ 1V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
APT10SCE170B Microsemi Corporation

APT10SCE170B

DIODE SIL CARB 1.7KV 23A TO247

Microsemi Corporation

7,868 -
Datasheet - TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1700 V 23A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1700 V 1120pF @ 0V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
APT10SCE65B Microsemi Corporation

APT10SCE65B

DIODE SCHOTTKY 650V 10A TO247

Microsemi Corporation

6,529 -
Datasheet * - Tube Obsolete - - - - - - - - - - - - -
APT10SCE65K Microsemi Corporation

APT10SCE65K

DIODE SCHOTTKY 650V 10A TO220

Microsemi Corporation

7,040 -
Datasheet * - Tube Obsolete - - - - - - - - - - - - -
APT20SCE120B Microsemi Corporation

APT20SCE120B

DIODE SCHOTTKY 1200V 20A TO247

Microsemi Corporation

5,612 -
Datasheet * - Tube Obsolete - - - - - - - - - - - - -
APT20SCE170B Microsemi Corporation

APT20SCE170B

DIODE SCHOTTKY 1700V 20A TO247

Microsemi Corporation

4,944 -
Datasheet * - Tube Obsolete - - - - - - - - - - - - -
APT20SCE65B Microsemi Corporation

APT20SCE65B

DIODE SCHOTTKY 650V 20A TO247

Microsemi Corporation

5,883 -
Datasheet * - Tube Obsolete - - - - - - - - - - - - -
APT50SCE120B Microsemi Corporation

APT50SCE120B

DIODE SCHOTTKY 1200V 50A TO247

Microsemi Corporation

4,586 -
Datasheet * - Tube Obsolete - - - - - - - - - - - - -
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