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ELECTRONIC COMPONENTS
Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.jpg "1N4942GP-AP")
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1N4942GP-APDIODE GEN PURP 200V 1A DO41 |
4,184 | - |
|
Datasheet | - | DO-204AL, DO-41, Axial | Tape & Box (TB) | Active | Standard | 200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -55°C ~ 150°C |
|
1N5401GP-APDIODE GEN PURP 100V 3A DO201AD |
7,978 | - |
|
Datasheet | - | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 100 V | 3A | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 40pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
1N5404GP-APDIODE GEN PURP 400V 3A DO201AD |
9,340 | - |
|
Datasheet | - | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 400 V | 3A | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 400 V | 40pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
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1N5407GP-APDIODE GEN PURP 800V 3A DO201AD |
4,766 | - |
|
Datasheet | - | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 800 V | 3A | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 40pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
FR1003GP-APDIODE GEN PURP 200V 10A R-6 |
9,812 | - |
|
Datasheet | - | R-6, Axial | Tape & Box (TB) | Active | Standard | 200 V | 10A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | - | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
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FR1004GP-APDIODE GEN PURP 400V 10A R-6 |
8,764 | - |
|
Datasheet | - | R-6, Axial | Tape & Box (TB) | Active | Standard | 400 V | 10A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | - | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
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FR1007GP-APDIODE GEN PURP 1KV 10A R-6 |
4,382 | - |
|
Datasheet | - | R-6, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 10A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | - | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
FR204GP-APDIODE GEN PURP 400V 2A DO15 |
9,618 | - |
|
Datasheet | - | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 400 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 40pF @ 4V, 1MHz | - | - | Through Hole | DO-15 | -55°C ~ 150°C |
|
|
FR205GP-APDIODE GEN PURP 600V 2A DO15 |
8,944 | - |
|
Datasheet | - | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 600 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 600 V | 40pF @ 4V, 1MHz | - | - | Through Hole | DO-15 | -55°C ~ 150°C |
|
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FR206GP-APDIODE GEN PURP 800V 2A DO15 |
5,869 | - |
|
Datasheet | - | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 800 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 40pF @ 4V, 1MHz | - | - | Through Hole | DO-15 | -55°C ~ 150°C |
|
|
FR305GP-APDIODE GEN PURP 600V 3A DO201AD |
8,515 | - |
|
Datasheet | - | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 600 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 600 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
FR307GP-APDIODE GEN PURP 1KV 3A DO201AD |
6,965 | - |
|
Datasheet | - | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
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FR504GP-APDIODE GEN PURP 400V 5A DO201AD |
7,280 | - |
|
Datasheet | - | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 400 V | 5A | 1.35 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 400 V | 65pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
FR506GP-APDIODE GEN PURP 800V 5A DO201AD |
5,505 | - |
|
Datasheet | - | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 800 V | 5A | 1.35 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 10 µA @ 800 V | 65pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
FR507GP-APDIODE GEN PURP 1KV 5A DO201AD |
3,687 | - |
|
Datasheet | - | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 5A | 1.35 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 10 µA @ 1000 V | 65pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
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FR603GP-APDIODE GEN PURP 200V 6A R-6 |
7,918 | - |
|
Datasheet | - | R-6, Axial | Tape & Box (TB) | Active | Standard | 200 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 200 V | 150pF @ 4V, 1MHz | - | - | Through Hole | R-6 | -55°C ~ 150°C |
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HER303G-APDIODE GEN PURP 200V 3A DO201AD |
2,533 | - |
|
Datasheet | - | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 200 V | 3A | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 200 V | 80pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
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HER604GP-APDIODE GEN PURP 300V 6A R-6 |
2,908 | - |
|
Datasheet | - | R-6, Axial | Tape & Box (TB) | Active | Standard | 300 V | 6A | 1.1 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | 100pF @ 4V, 1MHz | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
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HER605GP-APDIODE GEN PURP 400V 6A R-6 |
4,944 | - |
|
Datasheet | - | R-6, Axial | Tape & Box (TB) | Active | Standard | 400 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 100pF @ 4V, 1MHz | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
1A1-APDIODE GEN PURP 50V 1A R-1 |
5,995 | - |
|
Datasheet | - | R-1, Axial | Tape & Box (TB) | Obsolete | Standard | 50 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 50 V | 15pF @ 4V, 1MHz | - | - | Through Hole | R-1 | -55°C ~ 150°C |
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