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ELECTRONIC COMPONENTS
Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SDUR30U120W1200V, 30A, TO-247AC, ULTRA FAST |
200 | - |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
S6D06065IDIODE SCHOTTKY SILICON CARBIDE S |
995 | - |
|
Datasheet | - | TO-220-2 Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 25A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 3 µA @ 650 V | 559pF @ 0V, 1MHz | - | - | Through Hole | TO-220-Isolation | -55°C ~ 175°C |
|
|
S6D10065FDIODE SCHOTTKY SILICON CARBIDE S |
492 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 33A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 769pF @ 0V, 1MHz | - | - | Through Hole | ITO-220AC (TO-220-2F) | -55°C ~ 175°C |
|
|
S6D10065ADIODE SCHOTTKY SILICON CARBIDE S |
3,659 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 33A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 769pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
MBR80100WT100V, 80A, TO-247AD, DIODE SCHOT |
300 | - |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SDUR10020W200V, 100A, TO-247AC, ULTRA FAST |
175 | - |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SDUR60H120W1200V, 60A, TO-247AC, ULTRA FAST |
560 | - |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SDUR80P65WT80A,650V,TO-247AD, ULTRAFAST REC |
214 | - |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
S6D10065IDIODE SCHOTTKY SILICON CARBIDE S |
1,000 | - |
|
Datasheet | - | TO-220-2 Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 33A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 769pF @ 0V, 1MHz | - | - | Through Hole | TO-220-Isolation | -55°C ~ 175°C |
|
|
S6D10065D1DIODE SCHOTTKY SILICON CARBIDE S |
280 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 33A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 769pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
BOM & COMPONENT SOURCING
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