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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
HERAF1008G Taiwan Semiconductor Corporation

HERAF1008G

DIODE GEN PURP 1KV 10A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 1000 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 1000 V 60pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1004G Taiwan Semiconductor Corporation

HERAF1004G

DIODE GEN PURP 300V 10A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 300 V 10A 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V 80pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1007GH Taiwan Semiconductor Corporation

HERAF1007GH

80NS, 10A, 800V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 800 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 800 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF1008GH Taiwan Semiconductor Corporation

HERAF1008GH

80NS, 10A, 1000V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 1000 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 1000 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
SF2006G Taiwan Semiconductor Corporation

SF2006G

DIODE GEN PURP 400V 20A TO220AB

Taiwan Semiconductor Corporation

995 -
Datasheet - TO-220-3 Tube Active Standard 400 V 20A 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 400 V 80pF @ 4V, 1MHz - - Through Hole TO-220AB -55°C ~ 150°C
SFAF1004G Taiwan Semiconductor Corporation

SFAF1004G

DIODE GEN PURP 200V 10A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 200 V 10A 975 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 170pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
UG5J Taiwan Semiconductor Corporation

UG5J

DIODE GEN PURP 600V 5A TO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Tube Active Standard 600 V 5A 3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 30 µA @ 600 V - - - Through Hole TO-220AC -55°C ~ 150°C
UG5JH Taiwan Semiconductor Corporation

UG5JH

20NS, 5A, 600V, ULTRA FAST RECOV

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Tube Active Standard 600 V 5A 3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
UGF5JH Taiwan Semiconductor Corporation

UGF5JH

25NS, 5A, 600V, ULTRA FAST RECOV

Taiwan Semiconductor Corporation

990 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 5A 3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
MURF8L60 Taiwan Semiconductor Corporation

MURF8L60

DIODE GEN PURP 600V 8A ITO220AC

Taiwan Semiconductor Corporation

468 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 5 µA @ 600 V - - - Through Hole ITO-220AC -55°C ~ 175°C
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