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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SS15 R3G Taiwan Semiconductor Corporation

SS15 R3G

DIODE SCHOTTKY 50V 1A DO214AC

Taiwan Semiconductor Corporation

9,385 -
Datasheet - DO-214AC, SMA Tape & Reel (TR) Discontinued at Digi-Key Schottky 50 V 1A 750 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 50 V - - - Surface Mount DO-214AC (SMA) -55°C ~ 150°C
SFAF807GH Taiwan Semiconductor Corporation

SFAF807GH

35NS, 8A, 500V, SUPER FAST RECOV

Taiwan Semiconductor Corporation

4,987 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 500 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 500 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
SFAF807G Taiwan Semiconductor Corporation

SFAF807G

35NS, 8A, 500V, SUPER FAST RECOV

Taiwan Semiconductor Corporation

8,308 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 500 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 500 V 60pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
TST20U100C Taiwan Semiconductor Corporation

TST20U100C

DIODE SCHOTTKY 100V 10A TO220AB

Taiwan Semiconductor Corporation

6,383 -
Datasheet - TO-220-3 Tube Obsolete Schottky 100 V 10A 790 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 100 V - - - Through Hole TO-220AB -55°C ~ 150°C
HERAF803GH Taiwan Semiconductor Corporation

HERAF803GH

50NS, 8A, 200V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

3,830 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 200 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF803G Taiwan Semiconductor Corporation

HERAF803G

50NS, 8A, 200V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

5,364 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 200 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V 80pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF801GH Taiwan Semiconductor Corporation

HERAF801GH

50NS, 8A, 50V, HIGH EFFICIENT RE

Taiwan Semiconductor Corporation

5,329 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 50 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 50 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF801G Taiwan Semiconductor Corporation

HERAF801G

50NS, 8A, 50V, HIGH EFFICIENT RE

Taiwan Semiconductor Corporation

8,554 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 50 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 50 V 80pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1003GH Taiwan Semiconductor Corporation

HERAF1003GH

50NS, 10A, 200V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

8,784 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 200 V 10A 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF802G Taiwan Semiconductor Corporation

HERAF802G

50NS, 8A, 100V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

8,259 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 100 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 80pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
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