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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
MBRB1045HM3/I Vishay General Semiconductor - Diodes Division

MBRB1045HM3/I

DIODE SCHOTTKY 45V 10A TO263AB

Vishay General Semiconductor - Diodes Division

5,070 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 45 V 10A - Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 45 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -65°C ~ 150°C
FESB16DT-M3/I Vishay General Semiconductor - Diodes Division

FESB16DT-M3/I

DIODE GEN PURP 200V 16A TO263AB

Vishay General Semiconductor - Diodes Division

8,415 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 200 V 16A 975 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 175pF @ 4V, 1MHz - - Surface Mount TO-263AB (D2PAK) -65°C ~ 150°C
MBRB1045-M3/I Vishay General Semiconductor - Diodes Division

MBRB1045-M3/I

DIODE SCHOTTKY 45V 10A TO263AB

Vishay General Semiconductor - Diodes Division

8,868 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 45 V 10A - Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 45 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -65°C ~ 150°C
VS-100BGQ030-N4 Vishay General Semiconductor - Diodes Division

VS-100BGQ030-N4

DIODE SCHOTTKY 30V 100A POWIRTAB

Vishay General Semiconductor - Diodes Division

6,380 -
Datasheet - PowerTab® Bulk Active Schottky 30 V 100A 630 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 2.4 mA @ 30 V 3800pF @ 5V, 1MHz - - Through Hole PowerTab® -55°C ~ 150°C
VS-150EBU04HN4 Vishay General Semiconductor - Diodes Division

VS-150EBU04HN4

DIODE GP 400V 150A POWERTAB

Vishay General Semiconductor - Diodes Division

5,145 -
Datasheet - PowerTab® Tube Active Standard 400 V 150A 1.3 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 93 ns 50 µA @ 400 V - - - Through Hole PowerTab® -55°C ~ 175°C
VS-175BGQ030-N4 Vishay General Semiconductor - Diodes Division

VS-175BGQ030-N4

DIODE SCHOTTKY 30V 175A POWIRTAB

Vishay General Semiconductor - Diodes Division

4,584 -
Datasheet - PowerTab® Bulk Active Schottky 30 V 175A 590 mV @ 175 A Fast Recovery =< 500ns, > 200mA (Io) - 4.8 mA @ 30 V 8500pF @ 5V, 1MHz - - Through Hole PowerTab® -55°C ~ 150°C
VS-150EBU04-N4 Vishay General Semiconductor - Diodes Division

VS-150EBU04-N4

DIODE GP 400V 150A POWIRTAB

Vishay General Semiconductor - Diodes Division

5,486 -
Datasheet - PowerTab® Bulk Active Standard 400 V 150A 1.3 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 50 µA @ 400 V - - - Through Hole PowerTab® -55°C ~ 175°C
VS-175BGQ045-N4 Vishay General Semiconductor - Diodes Division

VS-175BGQ045-N4

DIODE SCHOTTKY 45V 175A POWIRTAB

Vishay General Semiconductor - Diodes Division

3,681 -
Datasheet - PowerTab® Bulk Active Schottky 45 V 175A 750 mV @ 175 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 45 V 5600pF @ 5V, 1MHz - - Through Hole PowerTab® -55°C ~ 150°C
VS-80EBU02HN4 Vishay General Semiconductor - Diodes Division

VS-80EBU02HN4

DIODE GEN PURP 200V 80A POWERTAB

Vishay General Semiconductor - Diodes Division

7,946 -
Datasheet - PowerTab® Tube Active Standard 200 V 80A 1.1 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 50 µA @ 200 V - - - Through Hole PowerTab® -55°C ~ 175°C
VS-80EBU04-N4 Vishay General Semiconductor - Diodes Division

VS-80EBU04-N4

DIODE GEN PURP 400V 80A POWIRTAB

Vishay General Semiconductor - Diodes Division

2,687 -
Datasheet - PowerTab® Bulk Active Standard 400 V 80A 1.3 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 87 ns 50 µA @ 400 V - - - Through Hole PowerTab® -55°C ~ 175°C
BOM & COMPONENT SOURCING

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