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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VI30100SG-E3/4W Vishay General Semiconductor - Diodes Division

VI30100SG-E3/4W

DIODE SCHOTTKY 100V 30A TO262AA

Vishay General Semiconductor - Diodes Division

5,888 -
Datasheet TMBS® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active Schottky 100 V 30A 1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 100 V - - - Through Hole TO-262AA -40°C ~ 150°C
1N5822/54 Vishay General Semiconductor - Diodes Division

1N5822/54

DIODE SCHOTTKY 40V 3A DO201AD

Vishay General Semiconductor - Diodes Division

6,842 -
Datasheet - DO-201AD, Axial Tape & Reel (TR) Obsolete Schottky 40 V 3A 525 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 40 V - - - Through Hole DO-201AD -65°C ~ 125°C
SB320-E3/73 Vishay General Semiconductor - Diodes Division

SB320-E3/73

DIODE SCHOTTKY 20V 3A DO201AD

Vishay General Semiconductor - Diodes Division

8,971 -
Datasheet - DO-201AD, Axial Cut Tape (CT) Active Schottky 20 V 3A 490 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 20 V - - - Through Hole DO-201AD -65°C ~ 150°C
GF1MHE3/67A Vishay General Semiconductor - Diodes Division

GF1MHE3/67A

DIODE GEN PURP 1KV 1A DO214BA

Vishay General Semiconductor - Diodes Division

9,799 -
Datasheet SUPERECTIFIER® DO-214BA Tape & Reel (TR) Obsolete Standard 1000 V 1A 1.2 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 1000 V - - - Surface Mount DO-214BA (GF1) -65°C ~ 175°C
V20150S-E3/4W Vishay General Semiconductor - Diodes Division

V20150S-E3/4W

DIODE SCHOTTKY 150V 20A TO220-3

Vishay General Semiconductor - Diodes Division

2,855 -
Datasheet TMBS® TO-220-3 Tube Active Schottky 150 V 20A 1.43 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 150 V - - - Through Hole TO-220-3 -55°C ~ 150°C
V30100SG-M3/4W Vishay General Semiconductor - Diodes Division

V30100SG-M3/4W

DIODE SCHOTTKY 100V 30A TO220-3

Vishay General Semiconductor - Diodes Division

4,540 -
Datasheet TMBS® TO-220-3 Tube Active Schottky 100 V 30A 1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 100 V - - - Through Hole TO-220-3 -40°C ~ 150°C
FESF8AT-E3/45 Vishay General Semiconductor - Diodes Division

FESF8AT-E3/45

DIODE GEN PURP 50V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

4,137 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active Standard 50 V 8A 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 50 V - - - Through Hole ITO-220AC -55°C ~ 150°C
FESF8BT-E3/45 Vishay General Semiconductor - Diodes Division

FESF8BT-E3/45

DIODE GEN PURP 100V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

5,062 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active Standard 100 V 8A 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 100 V - - - Through Hole ITO-220AC -55°C ~ 150°C
FESF8CT-E3/45 Vishay General Semiconductor - Diodes Division

FESF8CT-E3/45

DIODE GEN PURP 150V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

2,901 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active Standard 150 V 8A 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V - - - Through Hole ITO-220AC -55°C ~ 150°C
FESF8DT-E3/45 Vishay General Semiconductor - Diodes Division

FESF8DT-E3/45

DIODE GEN PURP 200V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

5,320 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active Standard 200 V 8A 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - - - Through Hole ITO-220AC -55°C ~ 150°C
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