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ELECTRONIC COMPONENTS
Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ADC6D10065EDIODE SIL SIC 650V 35A TO252-2 |
1,500 | - |
|
Datasheet | WBG | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 35A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 650 V | 6.3pF @ 0V, 100kHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
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ADC4D10120DDIODE SIL SIC 1200V 9A TO247-3 |
550 | - |
|
Datasheet | WBG | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 9A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 1200 V | 6.3pF @ 0V, 100kHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
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|
ADE4D20120DDIODE SIL SIC 1200V 33A TO247-3 |
500 | - |
|
Datasheet | WBG | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 33A | 1.85 V @ 20 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 1200 V | 12pF @ 0V, 100kHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
|
ADC6D10065GDIODE SIL SIC 650V 36A TO263-2 |
1,000 | - |
|
Datasheet | WBG | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 36A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 650 V | 6.3pF @ 0V, 100kHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
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ADC3D10065IDIODE SIL SIC 1200V 10A TO220 |
550 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 2 µA @ 650 V | 6.3pF @ 200V, 100kHz | - | - | Through Hole | TO-220F | -40°C ~ 175°C |
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ADC4D10120EDIODE SIL SIC 1200V 33A TO252-2 |
2,500 | - |
|
Datasheet | WBG | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 1200 V | 6.3pF @ 0V, 100kHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
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ADC4D10120HDIODE SIL SIC 1200V 31.5A TO247- |
950 | - |
|
Datasheet | WBG | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 31.5A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 1200 V | 6.3pF @ 0V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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ADE4D20120GDIODE SIL SIC 1200V 56A TO263-2 |
600 | - |
|
Datasheet | WBG | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 56A | 1.85 V @ 20 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 1200 V | 12pF @ 0V, 100kHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
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ADC4D20120HDIODE SIL SIC 1200V 54A TO247-2 |
800 | - |
|
Datasheet | WBG | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 54A | 1.85 V @ 20 A | No Recovery Time > 500mA (Io) | - | 10 µA @ 1200 V | 12pF @ 0V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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ADC6D10065ADIODE SIL SIC 650V 37A TO220-2 |
1,075 | - |
|
Datasheet | WBG | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 37A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 650 V | 6.3pF @ 0V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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