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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
CLH01(TE16L,Q) Toshiba Semiconductor and Storage

CLH01(TE16L,Q)

DIODE GEN PURP 200V 3A L-FLAT

Toshiba Semiconductor and Storage

7,568 -
Datasheet - L-FLAT™ Bulk Obsolete Standard 200 V 3A 980 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 150°C
CLH03(TE16L,Q) Toshiba Semiconductor and Storage

CLH03(TE16L,Q)

DIODE GEN PURP 400V 3A L-FLAT

Toshiba Semiconductor and Storage

7,801 -
Datasheet - L-FLAT™ Bulk Obsolete Standard 400 V 3A - Fast Recovery =< 500ns, > 200mA (Io) 35 ns - - - - Surface Mount L-FLAT™ (4x5.5) -
CLH05(T6L,NKOD,Q) Toshiba Semiconductor and Storage

CLH05(T6L,NKOD,Q)

DIODE GEN PURP 200V 5A L-FLAT

Toshiba Semiconductor and Storage

6,300 -
Datasheet - L-FLAT™ Bulk Obsolete Standard 200 V 5A 980 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 150°C
CLH05(TE16R,Q) Toshiba Semiconductor and Storage

CLH05(TE16R,Q)

DIODE GEN PURP 200V 5A L-FLAT

Toshiba Semiconductor and Storage

6,098 -
Datasheet - L-FLAT™ Bulk Obsolete Standard 200 V 5A 980 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 150°C
CLH05,LMBJQ(O Toshiba Semiconductor and Storage

CLH05,LMBJQ(O

DIODE GEN PURP 200V 5A L-FLAT

Toshiba Semiconductor and Storage

9,589 -
Datasheet - L-FLAT™ Bulk Obsolete Standard 200 V 5A 980 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 150°C
CLH06(TE16L,Q) Toshiba Semiconductor and Storage

CLH06(TE16L,Q)

DIODE GEN PURP 300V 5A L-FLAT

Toshiba Semiconductor and Storage

3,653 -
Datasheet - L-FLAT™ Bulk Obsolete Standard 300 V 5A - Fast Recovery =< 500ns, > 200mA (Io) 35 ns - - - - Surface Mount L-FLAT™ (4x5.5) -
CLH07(TE16L,NMB,Q) Toshiba Semiconductor and Storage

CLH07(TE16L,NMB,Q)

DIODE GEN PURP 400V 5A L-FLAT

Toshiba Semiconductor and Storage

3,498 -
Datasheet - L-FLAT™ Bulk Obsolete Standard 400 V 5A 1.8 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V - - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 150°C
CLH07(TE16R,Q) Toshiba Semiconductor and Storage

CLH07(TE16R,Q)

DIODE GEN PURP 400V 5A L-FLAT

Toshiba Semiconductor and Storage

4,531 -
Datasheet - L-FLAT™ Bulk Obsolete Standard 400 V 5A 1.8 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V - - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 150°C
CLS01(T6LSONY,Q) Toshiba Semiconductor and Storage

CLS01(T6LSONY,Q)

DIODE SCHOTTKY 30V 10A L-FLAT

Toshiba Semiconductor and Storage

2,161 -
Datasheet - L-FLAT™ Bulk Obsolete Schottky 30 V 10A 470 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 30 V 530pF @ 10V, 1MHz - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 125°C
CLS01(TE16L,PAS,Q) Toshiba Semiconductor and Storage

CLS01(TE16L,PAS,Q)

DIODE SCHOTTKY 30V 10A L-FLAT

Toshiba Semiconductor and Storage

3,213 -
Datasheet - L-FLAT™ Bulk Obsolete Schottky 30 V 10A 470 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 30 V 530pF @ 10V, 1MHz - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 125°C
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