Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STPS20SM100ST DIODE SCHOTTKY 100V 20A TO220 STMicroelectronics	887	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	Schottky	100 V	20A	900 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 100 V	-	-	-	Through Hole	TO-220	150°C (Max)
CBS05F30,L3F DIODE SCHOTTKY 30V 500MA CST2B Toshiba Semiconductor and Storage	9,981	-	RFQ	Datasheet	-	2-SMD, No Lead	Tape & Reel (TR)	Active	Schottky	30 V	500mA	-	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 30 V	118pF @ 0V, 1MHz	-	-	Surface Mount	CST2B	125°C (Max)
VS-E5TX3012-M3 DIODE GEN PURP 1.2KV 30A TO220AC Vishay General Semiconductor - Diodes Division	7,970	-	RFQ	Datasheet	FRED Pt®	TO-220-2	Tube	Active	Standard	1200 V	30A	3.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
DSEI25-06A DIODE GEN PURP 600V 25A TO220-2 IXYS	2,072	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	25A	1.31 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 µA @ 600 V	20pF @ 400V, 1MHz	-	-	Through Hole	TO-220-2	-40°C ~ 150°C
RB078BGE30STL DIODE SCHOTTKY 30V 5A TO252GE Rohm Semiconductor	2,500	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Schottky	30 V	5A	720 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 30 V	-	-	-	Surface Mount	TO-252GE	150°C
RFN20TF6SFHC9 DIODE GEN PURP 600V 20A TO220NFM Rohm Semiconductor	458	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	20A	1.55 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220NFM	150°C (Max)
S3D06065I DIODE SIL CARB 650V 6A TO220 SMC Diode Solutions	891	-	RFQ	Datasheet	-	TO-220-2 Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	8 µA @ 650 V	382pF @ 0V, 1MHz	-	-	Through Hole	TO-220-Isolation	-55°C ~ 175°C
RFN10NS3STL DIODE GEN PURP 350V 10A LPDS Rohm Semiconductor	975	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	350 V	10A	1.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 350 V	-	-	-	Surface Mount	LPDS	150°C
RFUH20TJ6SGC9 DIODE GP 600V 20A TO220ACFP Rohm Semiconductor	635	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	20A	2.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220ACFP	150°C
1N4938-1 DIODE GEN PURP 175V 100MA DO35 Microchip Technology	369	-	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 175 V	-	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
FFSD0665A DIODE SIL CARBIDE 650V 11A DPAK onsemi	2,396	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	11A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	361pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
VS-EPH3006LHN3 DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division	180	-	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	30A	2.65 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	26 ns	30 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
S3D06065E DIODE SIL CARBIDE 650V 6A DPAK SMC Diode Solutions	682	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	8 µA @ 650 V	382pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
VS-E5PX3006L-N3 DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division	636	-	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	30A	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	41 ns	20 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
TPMR10J S1G DIODE GEN PURP 600V 10A TO277A Taiwan Semiconductor Corporation	2,672	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Standard	600 V	10A	1.8 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	10 µA @ 600 V	140pF @ 4V, 1MHz	-	-	Surface Mount	TO-277A (SMPC)	-55°C ~ 175°C
UJ3D06512TS DIODE SIL CARB 650V 12A TO220-2 Qorvo	10,601	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	392pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-E5TX1512S2LHM3 DIODE GEN PURP 1.2KV 15A TO263AB Vishay General Semiconductor - Diodes Division	694	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	15A	3.3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	77.5 ns	50 µA @ 1200 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
STPSC6H065D DIODE SIL CARB 650V 6A TO220AC STMicroelectronics	958	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	300pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
VS-C4PU6006L-N3 DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division	500	-	RFQ	Datasheet	FRED Pt®	TO-247-3	Tube	Active	Standard	600 V	30A	1.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	50 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
SCS302AHGC9 DIODE SIC 650V 2.15A TO220ACP Rohm Semiconductor	643	-	RFQ	Datasheet	-	TO-220-2	Tube	Not For New Designs	SiC (Silicon Carbide) Schottky	650 V	2.15A	1.5 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	10.8 µA @ 650 V	110pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACP	175°C (Max)

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