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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N3889R GeneSiC Semiconductor

1N3889R

DIODE GEN PURP REV 50V 12A DO4

GeneSiC Semiconductor

150 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 50 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
SCS210KGC17 Rohm Semiconductor

SCS210KGC17

DIODE SIC 1.2KV 10A TO220ACFP

Rohm Semiconductor

397 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 550pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
FFSP4065BDN-F085 onsemi

FFSP4065BDN-F085

DIODE SIL CARB 650V 20A TO220-3

onsemi

756 -
Datasheet - TO-220-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-220-3 -55°C ~ 175°C
C4D10120H Wolfspeed, Inc.

C4D10120H

DIODE SIL CARB 1.2KV 31.5A TO247

Wolfspeed, Inc.

1,226 -
Datasheet Z-Rec® TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 31.5A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 1200 V 754pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
SCS220AEGC11 Rohm Semiconductor

SCS220AEGC11

DIODE SIL CARBIDE 650V 20A TO247

Rohm Semiconductor

345 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 600 V 730pF @ 1V, 1MHz - - Through Hole TO-247 175°C
FFSH20120A-F085 onsemi

FFSH20120A-F085

DIODE SIL CARB 1.2KV 30A TO247-2

onsemi

398 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 30A - No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1220pF @ 1V, 100KHz Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
S3D35065D1 SMC Diode Solutions

S3D35065D1

DIODE SIL CARB 650V 35A TO247AD

SMC Diode Solutions

585 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 35A 1.7 V @ 35 A No Recovery Time > 500mA (Io) 0 ns 45 µA @ 650 V 2000pF @ 0V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
DHG30IM600PC-TUB IXYS

DHG30IM600PC-TUB

DIODE GEN PURP 600V 30A TO263

IXYS

1,361 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 600 V 30A 2.26 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 600 V 16pF @ 400V, 1MHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 150°C
VS-3C20ET07S2L-M3 Vishay General Semiconductor - Diodes Division

VS-3C20ET07S2L-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

565 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 845pF @ 1V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
SCS215AJHRTLL Rohm Semiconductor

SCS215AJHRTLL

DIODE SIL CARB 650V 15A TO263AB

Rohm Semiconductor

2,008 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 15A 1.55 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 600 V 550pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount TO-263AB 175°C (Max)
MSC020SDA120K Microchip Technology

MSC020SDA120K

DIODE SIL CARB 1.2KV 49A TO220-2

Microchip Technology

105 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 49A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1130pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-80APF10-M3 Vishay General Semiconductor - Diodes Division

VS-80APF10-M3

DIODE GEN PURP 1KV 80A TO247AC

Vishay General Semiconductor - Diodes Division

475 -
Datasheet - TO-247-3 Tube Active Standard 1000 V 80A 1.35 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1000 V - - - Through Hole TO-247AC -40°C ~ 150°C
DHG30I600HA IXYS

DHG30I600HA

DIODE GEN PURP 600V 30A TO247

IXYS

296 -
Datasheet - TO-247-2 Tube Active Standard 600 V 30A 2.36 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 600 V - - - Through Hole TO-247 -55°C ~ 150°C
FFSH20120ADN-F085 onsemi

FFSH20120ADN-F085

DIODE SIL CARB 1.2KV 15A TO247-3

onsemi

304 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A - No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 612pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-247-3 -55°C ~ 175°C
FFSH4065BDN-F085 onsemi

FFSH4065BDN-F085

DIODE SIL CARB 650V 20A TO247-3

onsemi

140 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-247-3 -55°C ~ 175°C
LSIC2SD065D20A Littelfuse Inc.

LSIC2SD065D20A

DIODE SIL CARB 650V 20A TO220AC

Littelfuse Inc.

742 -
Datasheet Gen2 TO-220-2 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 45 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-220AC -
S5D40120D SMC Diode Solutions

S5D40120D

1200V, 40A, TO-247AD, SIC SCHOTT

SMC Diode Solutions

1,800 -
Datasheet - TO-247-3 Tube Active - - - - - - - - - - Through Hole TO-247AD -
SCS220AJHRTLL Rohm Semiconductor

SCS220AJHRTLL

DIODE SIL CARB 650V 20A TO263AB

Rohm Semiconductor

2,697 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 600 V 730pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount TO-263AB 175°C (Max)
C4D15120H Wolfspeed, Inc.

C4D15120H

DIODE SIL CARB 1.2KV 39A TO247-2

Wolfspeed, Inc.

420 -
Datasheet Z-Rec® TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 39A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1200pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
FFSB20120A-F085 onsemi

FFSB20120A-F085

DIODE SIL CARB 1.2KV 32A D2PAK

onsemi

2,137 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 32A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1220pF @ 1V, 100KHz Automotive AEC-Q101 Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
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