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ELECTRONIC COMPONENTS
Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
US1MUltra Fast DIODE 1A 1000V SMA |
81,700 | - |
|
Datasheet | SMA | DO-214AC, SMA | Tape & Reel (TR) | Active | Standard | 1000 V | 1A | 1.7 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | - | - | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 150°C |
|
CBR06P65HLSIC SCHOTTKY DIODE,650V,6A,DFN 8 |
1,322 | - |
|
Datasheet | - | 4-PowerTSFN | Cut Tape (CT) | Active | SiC (Silicon Carbide) Schottky | 650 V | 18A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | - | - | - | Surface Mount | 4-DFN (8x8) | -55°C ~ 150°C |
|
|
CBR08P65DSIC SCHOTTKY DIODE,650V,8A,TO-25 |
1,850 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | SiC (Silicon Carbide) Schottky | 650 V | 29A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | - | Automotive | AEC-Q101 | Surface Mount | TO-252-2L | -55°C ~ 175°C |
|
|
CBR10P65HLSIC SCHOTTKY DIODE,650V,10A,DFN8 |
2,124 | - |
|
Datasheet | - | 4-PowerTSFN | Cut Tape (CT) | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | - | - | - | Surface Mount | 4-DFN (8x8) | -55°C ~ 150°C |
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|
CBR10P65SIC SCHOTTKY DIODE,650V,10A,TO-2 |
3,778 | - |
|
Datasheet | - | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 650 V | 29A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | - | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
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