Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
MR2504 DIODE GEN PURP 400V 25A MR EIC SEMICONDUCTOR INC.	2,000	-	RFQ	Datasheet	-	Microde Button	Bag	Active	Standard	400 V	25A	1 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	-	Automotive	-	Surface Mount	MR	-65°C ~ 175°C
10A05 DIODE GEN PURP 600V 10A D6 EIC SEMICONDUCTOR INC.	8,000	-	RFQ	Datasheet	-	D-6, Axial	Tape & Reel (TR)	Active	Standard	600 V	10A	1 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	80pF @ 4V, 1MHz	-	-	Through Hole	D6	-65°C ~ 150°C
MR754T/R DIODE GEN PURP 400V 6A D6 EIC SEMICONDUCTOR INC.	16,000	-	RFQ	Datasheet	-	D-6, Axial	Tape & Reel (TR)	Active	Standard	400 V	6A	900 mV @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 400 V	-	Automotive	-	Through Hole	D6	-65°C ~ 175°C
ESJA04-03A DIODE GEN PURP 3KV 1MA M1A EIC SEMICONDUCTOR INC.	15,000	-	RFQ	Datasheet	-	Axial	Bag	Active	Standard	3000 V	1mA	12 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	80 ns	2 µA @ 3000 V	-	-	-	Through Hole	M1A	120°C (Max)
HVR320BULK DIODE GEN PURP 2KV 3A DO201AD EIC SEMICONDUCTOR INC.	2,481	-	RFQ	Datasheet	-	DO-201AD, Axial	Bag	Active	Standard	2000 V	3A	2.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 2000 V	36pF @ 4V, 1MHz	-	-	Through Hole	DO-201AD	-40°C ~ 150°C
MURA110 DIODE GEN PURP 100V 2A SMA EIC SEMICONDUCTOR INC.	4,500	-	RFQ	Datasheet	-	DO-214AC, SMA	Bag	Active	Standard	100 V	2A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 100 V	-	-	-	Surface Mount	DO-214AC (SMA)	-65°C ~ 175°C
BY550-1000G DIODE GEN PURP 1KV 5A DO201AD EIC SEMICONDUCTOR INC.	5,050	-	RFQ	Datasheet	-	DO-201AD, Axial	Bag	Active	Standard	1000 V	5A	1.1 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	-	20 µA @ 1000 V	50pF @ 4V, 1MHz	-	-	Through Hole	DO-201AD	-65°C ~ 175°C
MR760 DIODE GEN PURP 1KV 22A D6 EIC SEMICONDUCTOR INC.	2,800	-	RFQ	Datasheet	-	D-6, Axial	Bag	Active	Standard	1000 V	22A	900 mV @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 1000 V	-	-	-	Through Hole	D6	-65°C ~ 175°C
1N4006T/R DIODE GEN PURP 800V 1A DO41 EIC SEMICONDUCTOR INC.	35,000	-	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Tape & Reel (TR)	Active	Standard	800 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 800 V	15pF @ 4V, 1MHz	-	-	Through Hole	DO-41	-65°C ~ 175°C
1N4005T/R DIODE GEN PURP 600V 1A DO41 EIC SEMICONDUCTOR INC.	10,000	-	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Tape & Reel (TR)	Active	Standard	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 600 V	15pF @ 4V, 1MHz	-	-	Through Hole	DO-41	-65°C ~ 175°C

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