FETs, MOSFETs

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
S2M0120120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	264	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	20V	150mOhm @ 13.3A, 20V	4V @ 3.3mA	29.6 nC @ 20 V	+20V, -5V	652 pF @ 1000 V	-	156W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD
S2M0120120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	295	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	20V	150mOhm @ 13.3A, 20V	4V @ 3.3mA	29.6 nC @ 20 V	+20V, -5V	652 pF @ 1000 V	-	156W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
S2M0160120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	16A (Tc)	20V	196mOhm @ 10A, 20V	4V @ 2.5mA	26.5 nC @ 20 V	+20V, -5V	513 pF @ 1000 V	-	122W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
S2M0120120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	327	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	20V	150mOhm @ 13.3A, 20V	4V @ 3.3mA	29.6 nC @ 20 V	+20V, -5V	652 pF @ 1000 V	-	153W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
S2M0080120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	230	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	37A (Tj)	20V	100mOhm @ 20A, 20V	4V @ 10mA	54 nC @ 20 V	+20V, -5V	1324 pF @ 1000 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
S2M0040120D-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	299	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tj)	20V	52mOhm @ 40A, 20V	4V @ 10mA	92.1 nC @ 20 V	+20V, -5V	1904 pF @ 1000 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD
S3M0040120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	65A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+20V, -8V	2844 pF @ 1000 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD
S2M0040120K-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tj)	20V	52mOhm @ 40A, 20V	4V @ 10mA	92.1 nC @ 20 V	+20V, -5V	1904 pF @ 1000 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
S3M0040120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	65A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+22V, -8V	2844 pF @ 1000 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
S3M0040120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	76A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+20V, -8V	2844 pF @ 1000 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7

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