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ELECTRONIC COMPONENTS
FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S3M0025120KMOSFET SILICON CARBIDE SIC 1200V |
240 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 77A (Tc) | 18V | 32mOhm @ 48A, 18V | 4V @ 20mA | 175 nC @ 18 V | +22V, -8V | 3519 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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S2M0016120D-1MOSFET SILICON CARBIDE SIC 1200V |
300 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 140A (Tc) | 18V, 20V | 23mOhm @ 75A, 20V | 3.6V @ 23mA | 285 nC @ 20 V | +20V, -5V | 4540 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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|
S2M0016120K-1MOSFET SILICON CARBIDE SIC 1200V |
147 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 140A (Tc) | 18V, 20V | 23mOhm @ 75A, 20V | 3.6V @ 23mA | 285 nC @ 20 V | +20V, -5V | 4540 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
S3M0016120BMOSFET SILICON CARBIDE SIC 1200V |
300 | - |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 106A (Tc) | 18V | 23mOhm @ 75A, 18V | 4V @ 30mA | 287 nC @ 18 V | +22V, -8V | 5251 pF @ 1000 V | - | 576W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
S2M0160120TMOSFET SILICON CARBIDE SIC 1200V |
300 | - |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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S2M0120120TMOSFET SILICON CARBIDE SIC 1200V |
300 | - |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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S2M0080120TMOSFET SILICON CARBIDE SIC 1200V |
300 | - |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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S3M0040120TMOSFET SILICON CARBIDE SIC 1200V |
250 | - |
|
Datasheet | - | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 65A (Tc) | 18V | 52mOhm @ 40A, 18V | 4V @ 16mA | 143 nC @ 18 V | +20V, -8V | 2844 pF @ 1000 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
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S2M0040120J-1MOSFET SILICON CARBIDE SIC 1200V |
510 | - |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tj) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 92.1 nC @ 20 V | +20V, -5V | 1904 pF @ 1000 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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S3M0025120TMOSFET SILICON CARBIDE SIC 1200V |
200 | - |
|
Datasheet | - | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 77A (Tc) | 18V | 32mOhm @ 48A, 18V | 4V @ 20mA | 175 nC @ 18 V | +22V, -8V | 3519 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
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