FETs, MOSFETs

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK17A80W,S4X MOSFET N-CH 800V 17A TO220SIS Toshiba Semiconductor and Storage	3,404	-	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Ta)	10V	290mOhm @ 8.5A, 10V	4V @ 850µA	32 nC @ 10 V	±20V	2050 pF @ 300 V	-	45W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK25A60X,S5X MOSFET N-CH 600V 25A TO220SIS Toshiba Semiconductor and Storage	1,806	-	RFQ	Datasheet	DTMOSIV-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Ta)	10V	125mOhm @ 7.5A, 10V	3.5V @ 1.2mA	40 nC @ 10 V	±30V	2400 pF @ 300 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK110E65Z,S1X 650V DTMOS VI TO-220 110MOHM Toshiba Semiconductor and Storage	2,746	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Ta)	10V	110mOhm @ 12A, 10V	4V @ 1.02mA	40 nC @ 10 V	±30V	2250 pF @ 300 V	-	190W (Tc)	150°C	-	-	Through Hole	TO-220
TK17E80W,S1X MOSFET N-CHANNEL 800V 17A TO220 Toshiba Semiconductor and Storage	4,858	-	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Ta)	10V	290mOhm @ 8.5A, 10V	4V @ 850µA	32 nC @ 10 V	±20V	2050 pF @ 300 V	-	180W (Tc)	150°C	-	-	Through Hole	TO-220
TK090E65Z,S1X 650V DTMOS VI TO-220 90MOHM Toshiba Semiconductor and Storage	2,461	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Ta)	10V	90mOhm @ 15A, 10V	4V @ 1.27mA	47 nC @ 10 V	±30V	2780 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-220
TK20J60W,S1VE X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	3,963	-	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	155mOhm @ 10A, 10V	3.7V @ 1mA	48 nC @ 10 V	±30V	1680 pF @ 300 V	-	165W (Tc)	150°C	-	-	Through Hole	TO-3P(N)
TK31E60X,S1X MOSFET N-CH 600V 30.8A TO220 Toshiba Semiconductor and Storage	2,017	-	RFQ	Datasheet	DTMOSIV-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK31N60X,S1F MOSFET N-CH 600V 30.8A TO247 Toshiba Semiconductor and Storage	2,926	-	RFQ	Datasheet	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TK090N65Z,S1F MOSFET N-CH 650V 30A TO247 Toshiba Semiconductor and Storage	1,561	-	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Ta)	10V	90mOhm @ 15A, 10V	4V @ 1.27mA	47 nC @ 10 V	±30V	2780 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247
TK28N65W5,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	4,631	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27.6A (Ta)	10V	130mOhm @ 13.8A, 10V	4.5V @ 1.6mA	90 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247

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