FETs, MOSFETs

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TW060N120C,S1F G3 1200V SIC-MOSFET TO-247 60MO Toshiba Semiconductor and Storage	1,338	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	18V	78mOhm @ 18A, 18V	5V @ 4.2mA	46 nC @ 18 V	+25V, -10V	1530 pF @ 800 V	-	170W (Tc)	175°C	-	-	Through Hole	TO-247
TW027N65C,S1F G3 650V SIC-MOSFET TO-247 27MOH Toshiba Semiconductor and Storage	3,289	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	58A (Tc)	18V	37mOhm @ 29A, 18V	5V @ 3mA	65 nC @ 18 V	+25V, -10V	2288 pF @ 400 V	-	156W (Tc)	175°C	-	-	Through Hole	TO-247
TW030N120C,S1F G3 1200V SIC-MOSFET TO-247 30MO Toshiba Semiconductor and Storage	3,984	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	18V	40mOhm @ 30A, 18V	5V @ 13mA	82 nC @ 18 V	+25V, -10V	2925 pF @ 800 V	-	249W (Tc)	175°C	-	-	Through Hole	TO-247
TW015N65C,S1F G3 650V SIC-MOSFET TO-247 15MOH Toshiba Semiconductor and Storage	2,317	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	100A (Tc)	18V	21mOhm @ 50A, 18V	5V @ 11.7mA	128 nC @ 18 V	+25V, -10V	4850 pF @ 400 V	-	342W (Tc)	175°C	-	-	Through Hole	TO-247
SSM6K404TU,LF MOSFET N-CH 20V 3A UF6 Toshiba Semiconductor and Storage	2,805	-	RFQ	Datasheet	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	3A (Ta)	1.5V, 4V	55mOhm @ 2A, 4V	1V @ 1mA	5.9 nC @ 4 V	±10V	400 pF @ 10 V	-	500mW (Ta)	150°C	-	-	Surface Mount	UF6
TK35A08N1,S4X MOSFET N-CH 80V 35A TO220SIS Toshiba Semiconductor and Storage	1,198	-	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	35A (Tc)	10V	12.2mOhm @ 17.5A, 10V	4V @ 300µA	25 nC @ 10 V	±20V	1700 pF @ 40 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK380A60Y,S4X MOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage	1,521	-	RFQ	Datasheet	DTMOSV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Tc)	10V	380mOhm @ 4.9A, 10V	4V @ 360µA	20 nC @ 10 V	±30V	590 pF @ 300 V	-	30W	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5R1A08QM,S4X UMOS10 TO-220SIS 80V 5.1MOHM Toshiba Semiconductor and Storage	1,034	-	RFQ	Datasheet	U-MOSX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	70A (Tc)	6V, 10V	5.1mOhm @ 35A, 10V	3.5V @ 700µA	54 nC @ 10 V	±20V	3980 pF @ 40 V	-	45W (Tc)	175°C	-	-	Through Hole	TO-220SIS
TK34E10N1,S1X MOSFET N-CH 100V 75A TO220 Toshiba Semiconductor and Storage	1,389	-	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	75A (Tc)	10V	9.5mOhm @ 17A, 10V	4V @ 500µA	38 nC @ 10 V	±20V	2600 pF @ 50 V	-	103W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK7A60W5,S5VX MOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage	3,788	-	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Ta)	10V	650mOhm @ 3.5A, 10V	4.5V @ 350µA	16 nC @ 10 V	±30V	490 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS

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