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ELECTRONIC COMPONENTS

FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK5Q65W,S1Q Toshiba Semiconductor and Storage

TK5Q65W,S1Q

MOSFET N-CH 650V 5.2A IPAK

Toshiba Semiconductor and Storage

4,074 -
Datasheet DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Ta) 10V 1.22Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Through Hole IPAK
TK9A45D(STA4,Q,M) Toshiba Semiconductor and Storage

TK9A45D(STA4,Q,M)

MOSFET N-CH 450V 9A TO220SIS

Toshiba Semiconductor and Storage

3,036 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 9A (Ta) 10V 770mOhm @ 4.5A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK5A53D(STA4,Q,M) Toshiba Semiconductor and Storage

TK5A53D(STA4,Q,M)

MOSFET N-CH 525V 5A TO220SIS

Toshiba Semiconductor and Storage

2,104 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 525 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK6A50D(STA4,Q,M) Toshiba Semiconductor and Storage

TK6A50D(STA4,Q,M)

MOSFET N-CH 500V 6A TO220SIS

Toshiba Semiconductor and Storage

2,525 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Ta) 10V 1.4Ohm @ 3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK6Q65W,S1Q Toshiba Semiconductor and Storage

TK6Q65W,S1Q

MOSFET N-CH 650V 5.8A IPAK

Toshiba Semiconductor and Storage

1,646 -
Datasheet DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5.8A (Ta) 10V 1.05Ohm @ 2.9A, 10V 3.5V @ 180µA 11 nC @ 10 V ±30V 390 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Through Hole IPAK
TK3R1E04PL,S1X Toshiba Semiconductor and Storage

TK3R1E04PL,S1X

MOSFET N-CH 40V 100A TO220

Toshiba Semiconductor and Storage

2,290 -
Datasheet U-MOSIX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 4.5V 2.4V @ 500µA 63.4 nC @ 10 V ±20V 4670 pF @ 20 V - 87W (Tc) 175°C (TJ) - - Through Hole TO-220
TK8A65W,S5X Toshiba Semiconductor and Storage

TK8A65W,S5X

MOSFET N-CH 650V 7.8A TO220SIS

Toshiba Semiconductor and Storage

1,315 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 650mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK560A60Y,S4X Toshiba Semiconductor and Storage

TK560A60Y,S4X

MOSFET N-CH 600V 7A TO220SIS

Toshiba Semiconductor and Storage

4,415 -
Datasheet DTMOSV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 560mOhm @ 3.5A, 10V 4V @ 240µA 14.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W 150°C (TJ) - - Through Hole TO-220SIS
TK5A60D(STA4,Q,M) Toshiba Semiconductor and Storage

TK5A60D(STA4,Q,M)

MOSFET N-CH 600V 5A TO220SIS

Toshiba Semiconductor and Storage

2,158 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Ta) 10V 1.43Ohm @ 2.5A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK8A45D(STA4,Q,M) Toshiba Semiconductor and Storage

TK8A45D(STA4,Q,M)

MOSFET N-CH 450V 8A TO220SIS

Toshiba Semiconductor and Storage

2,763 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 8A (Ta) 10V 900mOhm @ 4A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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