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ELECTRONIC COMPONENTS

Diode Arrays

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Diode Configuration Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Grade Qualification Mounting Type Supplier Device Package
MUR40060CTR GeneSiC Semiconductor

MUR40060CTR

DIODE MODULE GP 600V 200A 2TOWER

GeneSiC Semiconductor

6,552 -
Datasheet - Twin Tower Bulk Active 1 Pair Common Anode Standard 600 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MURT40010 GeneSiC Semiconductor

MURT40010

DIODE MODULE GP 100V 200A 3TOWER

GeneSiC Semiconductor

8,723 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Standard 100 V 200A 1.3 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT40010R GeneSiC Semiconductor

MURT40010R

DIODE MODULE GP 100V 200A 3TOWER

GeneSiC Semiconductor

5,958 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Standard 100 V 200A 1.3 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT40020 GeneSiC Semiconductor

MURT40020

DIODE MODULE GP 200V 200A 3TOWER

GeneSiC Semiconductor

9,622 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Standard 200 V 200A 1.3 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT40020R GeneSiC Semiconductor

MURT40020R

DIODE MODULE GP 200V 200A 3TOWER

GeneSiC Semiconductor

4,236 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Standard 200 V 200A 1.3 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
GB2X100MPS12-227 GeneSiC Semiconductor

GB2X100MPS12-227

DIODE MOD SIC 1200V 185A SOT-227

GeneSiC Semiconductor

6,906 -
Datasheet SiC Schottky MPS™ SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 185A (DC) 1.8 V @ 100 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 1200 V -55°C ~ 175°C - - Chassis Mount SOT-227
MBRT600100 GeneSiC Semiconductor

MBRT600100

DIODE MOD SCHOT 100V 300A 3TOWER

GeneSiC Semiconductor

7,527 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Schottky 100 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT600100R GeneSiC Semiconductor

MBRT600100R

DIODE MOD SCHOT 100V 300A 3TOWER

GeneSiC Semiconductor

6,699 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Schottky 100 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT60020 GeneSiC Semiconductor

MBRT60020

DIODE MOD SCHOTT 20V 300A 3TOWER

GeneSiC Semiconductor

8,913 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Schottky 20 V 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT60020R GeneSiC Semiconductor

MBRT60020R

DIODE MOD SCHOTT 20V 300A 3TOWER

GeneSiC Semiconductor

6,469 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Schottky 20 V 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
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