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ELECTRONIC COMPONENTS

Diode Arrays

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Diode Configuration Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Grade Qualification Mounting Type Supplier Device Package
MBRT60080 GeneSiC Semiconductor

MBRT60080

DIODE MOD SCHOTT 80V 300A 3TOWER

GeneSiC Semiconductor

9,383 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Schottky 80 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT60080R GeneSiC Semiconductor

MBRT60080R

DIODE MOD SCHOTT 80V 300A 3TOWER

GeneSiC Semiconductor

3,790 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Schottky 80 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT600150 GeneSiC Semiconductor

MBRT600150

DIODE MOD SCHOT 150V 300A 3TOWER

GeneSiC Semiconductor

4,803 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Schottky 150 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT600150R GeneSiC Semiconductor

MBRT600150R

DIODE MOD SCHOT 150V 300A 3TOWER

GeneSiC Semiconductor

2,645 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Schottky 150 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT600200 GeneSiC Semiconductor

MBRT600200

DIODE MOD SCHOT 200V 300A 3TOWER

GeneSiC Semiconductor

4,816 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Schottky 200 V 300A 920 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT600200R GeneSiC Semiconductor

MBRT600200R

DIODE MOD SCHOT 200V 300A 3TOWER

GeneSiC Semiconductor

6,147 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Schottky 200 V 300A 920 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRTA200100D GeneSiC Semiconductor

MSRTA200100D

DIODE MODULE GEN PURP 1000V 200A

GeneSiC Semiconductor

2,567 -
Datasheet - Module Bulk Active 1 Pair Series Connection Standard 1000 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V -55°C ~ 150°C - - Chassis Mount -
MSRTA20080D GeneSiC Semiconductor

MSRTA20080D

DIODE MODULE GEN PURP 800V 200A

GeneSiC Semiconductor

8,666 -
Datasheet - Module Bulk Active 1 Pair Series Connection Standard 800 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V -55°C ~ 150°C - - Chassis Mount -
MSRTA20060D GeneSiC Semiconductor

MSRTA20060D

DIODE MODULE GEN PURP 600V 200A

GeneSiC Semiconductor

9,627 -
Datasheet - Module Bulk Active 1 Pair Series Connection Standard 600 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -55°C ~ 150°C - - Chassis Mount -
MSRTA200120D GeneSiC Semiconductor

MSRTA200120D

DIODE MODULE GEN PURP 1200V 200A

GeneSiC Semiconductor

4,141 -
Datasheet - Module Bulk Active 1 Pair Series Connection Standard 1200 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount -
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