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ELECTRONIC COMPONENTS

Diode Arrays

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Diode Configuration Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Grade Qualification Mounting Type Supplier Device Package
MURTA500120 GeneSiC Semiconductor

MURTA500120

DIODE MOD GP 1200V 250A 3TOWER

GeneSiC Semiconductor

6,642 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Standard 1200 V 250A 2.6 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA500120R GeneSiC Semiconductor

MURTA500120R

DIODE MOD GP 1200V 250A 3TOWER

GeneSiC Semiconductor

3,168 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Standard 1200 V 250A 2.6 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA60020 GeneSiC Semiconductor

MURTA60020

DIODE MODULE GP 200V 300A 3TOWER

GeneSiC Semiconductor

8,269 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Standard 200 V 300A 1.3 V @ 300 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA60020R GeneSiC Semiconductor

MURTA60020R

DIODE MODULE GP 200V 300A 3TOWER

GeneSiC Semiconductor

2,173 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Standard 200 V 300A 1.3 V @ 300 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA60040 GeneSiC Semiconductor

MURTA60040

DIODE MODULE GP 400V 300A 3TOWER

GeneSiC Semiconductor

8,059 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Standard 400 V 300A 1.5 V @ 300 A Fast Recovery =< 500ns, > 200mA (Io) 220 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA60040R GeneSiC Semiconductor

MURTA60040R

DIODE MODULE GP 400V 300A 3TOWER

GeneSiC Semiconductor

7,778 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Standard 400 V 300A 1.5 V @ 300 A Fast Recovery =< 500ns, > 200mA (Io) 220 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA60060 GeneSiC Semiconductor

MURTA60060

DIODE MODULE GP 600V 300A 3TOWER

GeneSiC Semiconductor

4,714 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Standard 600 V 300A 1.7 V @ 300 A Fast Recovery =< 500ns, > 200mA (Io) 280 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA60060R GeneSiC Semiconductor

MURTA60060R

DIODE MODULE GP 600V 300A 3TOWER

GeneSiC Semiconductor

6,235 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Standard 600 V 300A 1.7 V @ 300 A Fast Recovery =< 500ns, > 200mA (Io) 280 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA600120 GeneSiC Semiconductor

MURTA600120

DIODE MOD GP 1200V 300A 3TOWER

GeneSiC Semiconductor

9,854 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Standard 1200 V 300A 2.6 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA600120R GeneSiC Semiconductor

MURTA600120R

DIODE MOD GP 1200V 300A 3TOWER

GeneSiC Semiconductor

7,752 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Standard 1200 V 300A 2.6 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount Three Tower
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