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ELECTRONIC COMPONENTS

Diode Arrays

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Diode Configuration Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Grade Qualification Mounting Type Supplier Device Package
MURTA40060 GeneSiC Semiconductor

MURTA40060

DIODE MODULE GP 600V 200A 3TOWER

GeneSiC Semiconductor

8,926 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Standard 600 V 200A 1.7 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA40060R GeneSiC Semiconductor

MURTA40060R

DIODE MODULE GP 600V 200A 3TOWER

GeneSiC Semiconductor

5,862 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Standard 600 V 200A 1.7 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA50020 GeneSiC Semiconductor

MURTA50020

DIODE MODULE GP 200V 250A 3TOWER

GeneSiC Semiconductor

6,817 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Standard 200 V 250A 1.3 V @ 250 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA50020R GeneSiC Semiconductor

MURTA50020R

DIODE MODULE GP 200V 250A 3TOWER

GeneSiC Semiconductor

9,670 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Standard 200 V 250A 1.3 V @ 250 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA50040 GeneSiC Semiconductor

MURTA50040

DIODE MODULE GP 400V 250A 3TOWER

GeneSiC Semiconductor

9,898 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Standard 400 V 250A 1.5 V @ 250 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA50040R GeneSiC Semiconductor

MURTA50040R

DIODE MODULE GP 400V 250A 3TOWER

GeneSiC Semiconductor

2,481 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Standard 400 V 250A 1.5 V @ 250 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA50060 GeneSiC Semiconductor

MURTA50060

DIODE MODULE GP 600V 250A 3TOWER

GeneSiC Semiconductor

4,713 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Standard 600 V 250A 1.7 V @ 250 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA50060R GeneSiC Semiconductor

MURTA50060R

DIODE MODULE GP 600V 250A 3TOWER

GeneSiC Semiconductor

6,123 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Standard 600 V 250A 1.7 V @ 250 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA400120 GeneSiC Semiconductor

MURTA400120

DIODE MOD GP 1200V 200A 3TOWER

GeneSiC Semiconductor

6,477 -
Datasheet - Three Tower Bulk Active 1 Pair Common Cathode Standard 1200 V 200A 2.6 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA400120R GeneSiC Semiconductor

MURTA400120R

DIODE MOD GP 1200V 200A 3TOWER

GeneSiC Semiconductor

4,014 -
Datasheet - Three Tower Bulk Active 1 Pair Common Anode Standard 1200 V 200A 2.6 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount Three Tower
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