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ELECTRONIC COMPONENTS
Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIC2060Y-BPSCHOTTKY DIODES |
3,538 | - |
|
Datasheet | - | TO-220-2 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 1157pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
SIC20120Y-BPSIC SBD,TO-220AC |
4,348 | - |
|
Datasheet | - | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 61A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 1200 V | 1552pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
SICF2060Y-BPSCHOTTKY DIODES |
6,871 | - |
|
Datasheet | - | TO-220-2 Isolated Tab | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 1157pF @ 0V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
|
SICPT2060Y-BPSCHOTTKY DIODES |
7,146 | - |
|
Datasheet | - | TO-247-2 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 1157pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
|
SICPT3060Y-BPSCHOTTKY DIODES |
7,095 | - |
|
Datasheet | - | TO-247-2 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 1157pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
|
SICU1060XY-TPSCHOTTKY DIODES |
6,340 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 32A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 543pF @ 0V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
|
SICPT20120Y-BPInterface |
6,444 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 1200 V | 1552pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
|
SICB0860P-TPDIODE SIL CARBIDE 650V 8A D2PAK |
8,987 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 36 µA @ 650 V | 346pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
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|
SIC15120Y-BPSCHOTTKY DIODES |
7,078 | - |
|
Datasheet | - | TO-220-2 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.45 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 1200 V | 1552pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
SICPT15120Y-BPSCHOTTKY DIODES |
8,252 | - |
|
Datasheet | - | TO-247-2 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.45 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 1200 V | 1552pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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