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ELECTRONIC COMPONENTS
Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SICPT5060Y-BPSCHOTTKY DIODES |
8,806 | - |
|
Datasheet | - | TO-247-2 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 119A | 1.6 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 2453pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
|
SIC15120B-BPInterface |
2,211 | - |
|
Datasheet | - | TO-220-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 1059pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
SICB5060XY-TPSCHOTTKY DIODES |
7,027 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 108A | 1.6 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 2453pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
|
|
SIC20120B-BPInterface |
3,825 | - |
|
Datasheet | - | TO-220-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
SICPT30120YA-BPSCHOTTKY DIODES |
3,783 | - |
|
Datasheet | - | TO-247-2 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.58 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 2179pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
|
SICPT30120YB-BPSCHOTTKY DIODES |
3,148 | - |
|
Datasheet | - | TO-247-2 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.75 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 33 µA @ 1200 V | 1722pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
SIC10120PTA-BPDIODE SIL CARB 1.2KV 10A TO247AD |
2,135 | - |
|
Datasheet | - | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 1200 V | 750pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
|
SICPT60120Y-BPSIC SBD,TO-247AD |
4,924 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 174A | 1.62 V @ 60 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 4750pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
|
SICPT40120YA-BPSCHOTTKY DIODES |
6,954 | - |
|
Datasheet | - | TO-247-2 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 40A | 1.58 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 38 µA @ 1200 V | 2900pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
|
SICU1060P-TPDIODE SIL CARBIDE 650V 10A DPAK |
4,192 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 44 µA @ 650 V | 452pF @ 0V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
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