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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SCS206AMC Rohm Semiconductor

SCS206AMC

DIODE SIL CARB 650V 6A TO220FM

Rohm Semiconductor

9,883 -
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.55 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 600 V 219pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
SCS306APC9 Rohm Semiconductor

SCS306APC9

DIODE SILICON CARBIDE 650V 6A

Rohm Semiconductor

4,796 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole - 175°C (Max)
SCS304AMC Rohm Semiconductor

SCS304AMC

DIODE SIL CARB 650V 4A TO220FM

Rohm Semiconductor

5,166 -
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 200pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
SCS215AEC Rohm Semiconductor

SCS215AEC

DIODE SIL CARBIDE 650V 15A TO247

Rohm Semiconductor

7,941 -
Datasheet - TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 15A 1.55 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 600 V 550pF @ 1V, 1MHz - - Through Hole TO-247 175°C (Max)
SCS215AGHRC Rohm Semiconductor

SCS215AGHRC

DIODE SIL CARB 650V 15A TO220AC

Rohm Semiconductor

6,299 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 15A 1.55 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 600 V 550pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC 175°C (Max)
SCS220AGC Rohm Semiconductor

SCS220AGC

DIODE SIL CARB 650V 20A TO220AC

Rohm Semiconductor

9,565 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 600 V 730pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
SCS208AMC Rohm Semiconductor

SCS208AMC

DIODE SIL CARB 650V 8A TO220FM

Rohm Semiconductor

7,856 -
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.55 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 160 µA @ 600 V 291pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
SCS306AMC Rohm Semiconductor

SCS306AMC

DIODE SIL CARB 650V 6A TO220FM

Rohm Semiconductor

6,403 -
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
SCS220AEC Rohm Semiconductor

SCS220AEC

DIODE SIL CARBIDE 650V 20A TO247

Rohm Semiconductor

2,874 -
Datasheet - TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 600 V 730pF @ 1V, 1MHz - - Through Hole TO-247 175°C (Max)
SCS220AGHRC Rohm Semiconductor

SCS220AGHRC

DIODE SIL CARB 650V 20A TO220AC

Rohm Semiconductor

5,973 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 600 V 730pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC 175°C (Max)
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