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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SCS210KGHRC Rohm Semiconductor

SCS210KGHRC

DIODE SIL CARB 1.2KV 10A TO220AC

Rohm Semiconductor

9,832 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 550pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC 175°C (Max)
SCS308AMC Rohm Semiconductor

SCS308AMC

DIODE SIL CARB 650V 8A TO220FM

Rohm Semiconductor

4,346 -
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 400pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
SCS112AGC Rohm Semiconductor

SCS112AGC

DIODE SIL CARB 600V 12A TO220AC

Rohm Semiconductor

3,335 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 240 µA @ 600 V 516pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
SCS210KE2C Rohm Semiconductor

SCS210KE2C

DIODE SIL CARB 1.2KV 10A TO247

Rohm Semiconductor

7,656 -
Datasheet - TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 10A - No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-247 175°C (Max)
SCS210AMC Rohm Semiconductor

SCS210AMC

DIODE SIL CARB 650V 10A TO220FM

Rohm Semiconductor

4,149 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.55 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 365pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
SCS110AMC Rohm Semiconductor

SCS110AMC

DIODE SIL CARB 600V 10A TO220FM

Rohm Semiconductor

4,548 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 430pF @ 1V, 1MHz - - Through Hole TO-220FM 150°C (Max)
SCS215AMC Rohm Semiconductor

SCS215AMC

DIODE SIL CARB 650V 12A TO220FM

Rohm Semiconductor

9,790 -
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.55 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 240 µA @ 600 V 438pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
SCS212AMC Rohm Semiconductor

SCS212AMC

DIODE SIL CARB 650V 12A TO220FM

Rohm Semiconductor

5,745 -
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.55 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 240 µA @ 600 V 438pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
SCS312AMC Rohm Semiconductor

SCS312AMC

DIODE SIL CARB 650V 12A TO220FM

Rohm Semiconductor

7,082 -
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.5 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 600pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
SCS215KGC Rohm Semiconductor

SCS215KGC

DIODE SIL CARB 1.2KV 15A TO220AC

Rohm Semiconductor

2,583 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 15A 1.6 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 1200 V 790pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
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